Zobrazeno 1 - 10
of 25
pro vyhledávání: '"Kawin Surakitbovorn"'
Publikováno v:
IEEE Open Journal of Power Electronics, Vol 3, Pp 846-855 (2022)
Plasma-assisted nitrogen fixation at atmospheric pressure is a clean and decentralized method for fertilizer production. Among many different plasma discharge types, dielectric barrier discharge (DBD) is one of the few that can generate high output o
Externí odkaz:
https://doaj.org/article/b984cca08c5c4d7aa7c3612b384ef606
Publikováno v:
IEEE Open Journal of Power Electronics, Vol 1, Pp 393-406 (2020)
Radio frequency (RF) power amplifiers are an integral part of many academic, medical, and industrial applications. For many of these applications, the RF power needs to quickly transition from one level to another. For switched-mode amplifiers, one w
Externí odkaz:
https://doaj.org/article/87dcd80bb8664cb4838cc0d74cc5eff4
Autor:
Wei Liang, Christine Charles, Luke Raymond, Alex Stuchbery, Kawin Surakitbovorn, Lei Gu, Rod Boswell, Juan Rivas-Davila
Publikováno v:
Frontiers in Physics, Vol 6 (2018)
Progress in satellite technologies is ongoing and eventually finds applications back on Earth. Electric propulsion systems have been proven effective on large scale satellites (NASA DAWN) with better propellant efficiency than chemical or cold gas pr
Externí odkaz:
https://doaj.org/article/b158b43a10524074879bd93ff0cdc552
Autor:
Kawin Surakitbovorn, Juan Rivas-Davila
Publikováno v:
IEEE Journal of Emerging and Selected Topics in Power Electronics. 10:2245-2253
Radio frequency (RF) power amplifiers are an integral part of many academic, medical, and industrial applications. For many of these applications, the required power level is high enough such that a single amplifier circuit cannot provide enough powe
Autor:
Kawin Surakitbovorn, Juan Rivas-Davila
Publikováno v:
IEEE Journal of Emerging and Selected Topics in Power Electronics. 8:2167-2178
Wireless power transfer (WPT) systems have attracted tremendous attention over the past decade. Most compact, low-power, WPT systems, however, utilize ferrites to shield and redirect the magnetic fields. Using a magnetic material adds the weight and
Autor:
Juan Rivas-Davila, Kawin Surakitbovorn
Publikováno v:
IEEE Transactions on Power Electronics. 35:4009-4023
Class-E power amplifiers have regained academic interest over the past decades due to the introduction of new high-performance wide-bandgap semiconductor devices and the increasing demand for high-efficiency power amplifiers. While these power device
Publikováno v:
IEEE Transactions on Power Electronics. 34:12181-12192
In this paper, we explore the challenges of implementing resonant converters using silicon carbide (SiC) power devices at high frequency: namely, the issue of high parasitic inductance packages and the ability to drive and enhance the mosfet at these
Publikováno v:
IEEE Transactions on Power Electronics. 33:10748-10763
We report losses from charging and discharging the parasitic output capacitor, ${\rm C}_{\rm OSS}$ , in Gallium Nitride (GaN) power devices with voltage ratings over 600 ${\rm V}_{\rm DS}$ . These losses are of particular importance in soft-switched
Publikováno v:
2019 IEEE Energy Conversion Congress and Exposition (ECCE).
In this paper, we explore the challenges of implementing resonant converters using silicon carbide (SiC) power devices at high-frequency: namely, the issue of the ability to drive and enhance the MOSFET at these frequencies. Although power circuit de
Publikováno v:
2019 20th Workshop on Control and Modeling for Power Electronics (COMPEL).
Class-E power amplifiers have regained academic interest over the past decades thanks to the introduction of new high-performance wide-bandgap semiconductor devices. While these power devices, notably GaN HEMTs, have exceptional performance at megahe