Zobrazeno 1 - 10
of 113
pro vyhledávání: '"Kawasaki, Jason K."'
Autor:
Du, Dongxue, Zhang, Cheyu, Wei, Jingrui, Teng, Yujia, Genser, Konrad, Voyles, Paul M., Rabe, Karin M., Kawasaki, Jason K.
Hexagonal $ABC$ intermetallics are predicted to have tunable ferroelectric, topological, and magnetic properties as a function of the polar buckling of $BC$ atomic planes. We report the impact of isovalent lanthanide substitution on the buckling, str
Externí odkaz:
http://arxiv.org/abs/2408.08290
Understanding the sticking coefficient $\sigma$, i.e., the probability of an adatom sticking to a surface, is essential for controlling the stoichiometry during epitaxial film growth. However, $\sigma$ on monolayer graphene-covered surfaces and its i
Externí odkaz:
http://arxiv.org/abs/2305.07793
Autor:
Du, Dongxue, Thoutam, Laxman Raju, Genser, Konrad T., Zhang, Chenyu, Rabe, Karin M., Jalan, Bharat, Voyles, Paul M., Kawasaki, Jason K.
We examine the effects of Pt vacancies on the magnetotransport properties of Weyl semimetal candidate GdPtSb films, grown by molecular beam epitaxy on c-plane sapphire. Rutherford backscattering spectrometry (RBS) and x-ray diffraction measurements s
Externí odkaz:
http://arxiv.org/abs/2304.03811
Publikováno v:
Appl. Phys. Lett. 122, 170501 (2023)
Strain is powerful for discovery and manipulation of new phases of matter; however, the elastic strains accessible to epitaxial films and bulk crystals are typically limited to small ($<2\%$), uniform, and often discrete values. This Perspective high
Externí odkaz:
http://arxiv.org/abs/2302.07390
Autor:
Du, Dongxue, Jung, Taehwan, Manzo, Sebastian, LaDuca, Zachary T., Zheng, Xiaoqi, Su, Katherine, McChesney, Jessica L., Arnold, Michael S., Kawasaki, Jason K.
Publikováno v:
Nano Letters 2022
Remote epitaxy on monolayer graphene is promising for synthesis of highly lattice mismatched materials, exfoliation of free-standing membranes, and re-use of expensive substrates. However, clear experimental evidence of a remote mechanism remains elu
Externí odkaz:
http://arxiv.org/abs/2208.05927
Autor:
Yoon, Hyojin, Truttmann, Tristan K., Liu, Fengdeng, Matthews, Bethany E., Choo, Sooho, Su, Qun, Saraswat, Vivek, Manzo, Sebastian, Arnold, Michael S., Bowden, Mark E., Kawasaki, Jason K., Koester, Steven J., Spurgeon, Steven R., Chambers, Scott A., Jalan, Bharat
The epitaxial growth of functional materials using a substrate with a graphene layer is a highly desirable method for improving structural quality and obtaining free-standing epitaxial nano-membranes for scientific study, applications, and economical
Externí odkaz:
http://arxiv.org/abs/2206.09094
Autor:
Lim, Zheng Hui, Manzo, Sebastian, Strohbeen, Patrick J., Saraswat, Vivek, Arnold, Michael S., Kawasaki, Jason K.
We demonstrate selective area epitaxy of GaAs films using patterned graphene masks on a Ge (001) substrate. The GaAs selectively grows on exposed regions of the Ge substrate, for graphene spacings as large as 10 microns. The selectivity is highly dep
Externí odkaz:
http://arxiv.org/abs/2111.01346
Autor:
Strohbeen, Patrick J., Manzo, Sebastian, Saraswat, Vivek, Su, Katherine, Arnold, Michael S., Kawasaki, Jason K.
Publikováno v:
ACS Applied Materials & Interfaces, 13 (35), 42146 (2021)
We quantify the mechanisms for manganese (Mn) diffusion through graphene in Mn/graphene/Ge (001) and Mn/graphene/GaAs (001) heterostructures for samples prepared by graphene layer transfer versus graphene growth directly on the semiconductor substrat
Externí odkaz:
http://arxiv.org/abs/2106.01239
Autor:
Manzo, Sebastian, Strohbeen, Patrick J., Lim, Zheng-Hui, Saraswat, Vivek, Arnold, Michael S., Kawasaki, Jason K.
Publikováno v:
Nature Communications 13, 4014 (2022)
Remote epitaxy is a promising approach for synthesizing exfoliatable crystalline membranes and enabling epitaxy of materials with large lattice mismatch. However, the atomic scale mechanisms for remote epitaxy remain unclear. Here we experimentally d
Externí odkaz:
http://arxiv.org/abs/2106.00721
Autor:
Marks, Samuel D., Lin, Lin, Zuo, Peng, Strohbeen, Patrick J., Jacobs, Ryan, Du, Dongxue, Waldvogel, Jason R., Liu, Rui, Savage, Donald E., Booske, John H., Kawasaki, Jason K., Babcock, Susan E., Morgan, Dane, Evans, Paul G.
Publikováno v:
Phys. Rev. Materials 5, 083402 (2021)
SrVO3 thin films with a high figure of merit for applications as transparent conductors were crystallized from amorphous layers using solid phase epitaxy (SPE). Epitaxial SrVO3 films crystallized on SrTiO3 using SPE exhibit a room temperature resisti
Externí odkaz:
http://arxiv.org/abs/2103.05797