Zobrazeno 1 - 10
of 20
pro vyhledávání: '"Kavita Vishwakarma"'
Autor:
Prerna Verma, Hetal Rathod, S. Johnson, Deepu Palal, Gracia Sohkhlet, Vallari Jadav, Nirankush Borah, Sandeep Nallapu, Shweta Gangurde, Kavita Vishwakarma, Anil Mahajan, Sudhir L. Jadhav, Shubham Joon
Publikováno v:
Indian Journal of Community Medicine, Vol 49, Iss 3, Pp 484-488 (2024)
Background: The basic product information, health, safety, and nutritional details, as well as food marketing, advertising, and promotion, are all provided on a packed food label. This study was carried out to assess the knowledge, attitude, and prac
Externí odkaz:
https://doaj.org/article/85bb36bd092a4b9597705e9bf5c12840
Autor:
Sonia Mehrotra, Raj Kumar Sharma, Kavita Vishwakarma, Narayan Prasad, Amit Gupta, Dharmendra S. Bhadauria, Anupama Kaul
Publikováno v:
Transplantation Reports, Vol 5, Iss 3, Pp 100059- (2020)
Sixty six patients were evaluated for donor specific anti HLA sensitization before they received ABO incompatible kidney transplantation. Each recipient was evaluated by complement dependent cytotoxicity (CDC) crossmatch, flow cytometric crossmatch,
Externí odkaz:
https://doaj.org/article/d10bb1353f4b45779c08794cc1f4d378
Publikováno v:
Indian Journal of Transplantation, Vol 11, Iss 1, Pp 22-24 (2017)
Lymphatic leak and lymphocele are well-known complications after renal transplantation, occurring among one-fourth of the recipients. We present a case of 42 year old male who underwent renal transplantation and developed recurrent perigraft collecti
Externí odkaz:
https://doaj.org/article/78cf7f6c3f994cb0b27f10d7afe03d66
Publikováno v:
IEEE Electron Device Letters. 44:797-800
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::277aac7f193f64b447be7af4f73cb153
https://doi.org/10.1109/led.2023.3261894
https://doi.org/10.1109/led.2023.3261894
Publikováno v:
IEEE Transactions on Electron Devices. 69:6738-6744
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f133c304e0d36198167faf2fd97102b3
https://doi.org/10.1109/ted.2022.3218000
https://doi.org/10.1109/ted.2022.3218000
Autor:
Prerna Verma, Sudhir L. Jadhav, Anjali Dhone, Sanjay Darade, S. Johnson, Deepu Palal, Shweta Gangurde, Kavita Vishwakarma, Hetal Rathod, Gracia Sohkhlet, Vallari Jadav, Nirankush Borah, Sandeep Nallapu, Mr Anil Mahajan, Suman Ray
Publikováno v:
Indian Journal of Tuberculosis.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6d09e6ff032521a62bcb22ff3e4d097c
https://doi.org/10.1016/j.ijtb.2023.05.014
https://doi.org/10.1016/j.ijtb.2023.05.014
Publikováno v:
2023 IEEE International Reliability Physics Symposium (IRPS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8a01b05322a62be9d9b7645e8ec2d41b
https://doi.org/10.1109/irps48203.2023.10118092
https://doi.org/10.1109/irps48203.2023.10118092
Autor:
Kavita Vishwakarma, Shivani Rani, Sumit Chahal, Chia-Yen Lu, Soumya Jyoti Ray, Chan-Shan Yang, Prashant Kumar
Publikováno v:
Physical Chemistry Chemical Physics. 24:12816-12826
Borophene (B), with remarkably unique chemical binding in its crystallographic structural phases including anisotropic structures, theoretically has high Young's modulus and thermal conductivity. Moreover, it is metallic in nature, and has recently j
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fe8a3f4ef5efdd64eb296045b0506955
https://doi.org/10.1039/d2cp01712a
https://doi.org/10.1039/d2cp01712a
Publikováno v:
IEEE Transactions on Device and Materials Reliability. 21:587-593
Eight level resistance switching in a tri-layer ReRAM cell (ZrOx/AlOx/HfOx) of fixed stack thickness was obtained by tuning the spatial location of its intermediate AlOx layer hence by varying its spatial distribution of three dielectrics. Here we ha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7be65ab1dcecbc9112ffca0e12e9efb8
https://doi.org/10.1109/tdmr.2021.3120966
https://doi.org/10.1109/tdmr.2021.3120966
Publikováno v:
IEEE Transactions on Electron Devices. 68:6087-6093
Eight-level/cell stable resistance switching (RS) was observed in an indium-gallium-zinc-oxide (IGZO)-resistive random (ReRAM) cell fabricated on ITO-coated glass substrate by providing nonuniform ozone (O₃) anneal treatment to its sputtered IGZO f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ed5394fb8d98e16c3fb63c67c5d5d60f
https://doi.org/10.1109/ted.2021.3121231
https://doi.org/10.1109/ted.2021.3121231