Výsledky vyhledávání - "Kaviani, Kian"

Conference

Feasibility study of integration of electro-optic polymer waveguide device with MOSFET circuitry on silicon.

Autor: Soggs, Susan, Sun, Haishan, Chen, Antao, Kaviani, Kian, Bhatambrekar, Nishant, Pyajt, Anna, Luo, Jingdong, Dalton, Larry, Parviz, Babak, Jen, Alex

Publikováno v: Proceedings of SPIE; Nov2005, Issue 1, p125-132, 8p

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Akademický článek

Effect of structural and chemical parameters on the optical properties of highly strained AlGaAs/InGaAs/AlGaAs quantum wells.

Autor: Kaviani, Kian, Chen, Li, Hu, Kezhong, Xie, Qianghua, Madhukar, Anupam

Publikováno v: Journal of Vacuum Science & Technology: Part B-Microelectronics & Nanometer Structures; 1993, Vol. 11 Issue 3, p805-808, 4p

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Akademický článek

Growth of high quality strained AlxGa1-xAs/In0.26Ga0.74As/AlzGa1-zAs quantum wells and the effect of silicon nitride encapsulation and rapid thermal annealing.

Autor: Kaviani, Kian, Chen, Jun, Hu, Kezhong, Chen, Li, Madhukar, Anupam

Publikováno v: Journal of Vacuum Science & Technology: Part B-Microelectronics & Nanometer Structures; 1992, Vol. 10 Issue 2, p793-796, 4p

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Conference

Physical and Chemical Effects of Focused Ga-Ion Beam on GaAs (100).

Autor: Chen, Wei, Chen, P., Viswanathan, R., Madhukar, A., Chen, Jun, Kaviani, Kian, Xie, Q., Hu, Kezhong

Publikováno v: MRS Online Proceedings Library; 02/10/1992, Vol. 268, pN.PAG-1, 1p

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Akademický článek

Realization of high performance doped-channel MISFETs in highly strained AlGaAs/InGaAs/AlGaAs based quantum wells

Autor: Kaviani, Kian, Hu, Kezhong, Xie, Qianghua, Madhukar, Anupam

Publikováno v: In Journal of Crystal Growth 1993 127(1):68-72

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