Zobrazeno 1 - 10
of 98
pro vyhledávání: '"Kaverzin, A. A."'
Publikováno v:
Appl. Phys. Lett. 124, 203103 (2024)
In the quantum Hall regime the charge current is carried by ideal one-dimensional edge channels where the backscattering is prohibited by topology. This results in the constant potential along the edge of the Hall bar leading to zero 4-terminal longi
Externí odkaz:
http://arxiv.org/abs/2405.05515
Quality of the electrical contacts and interfaces in various metal/semiconductor/insulator heterostructures is one of the pivotal aspects in both applied and fundamental research areas. For instance, non-optimal contact resistance can limit the overa
Externí odkaz:
http://arxiv.org/abs/2311.10340
Publikováno v:
Phys. Rev. Applied 20, 054006 (2023)
We report electric detection of the spin Peltier effect (SPE) in a bilayer consisting of a Pt film and a Y$_{3}$Fe$_5$O$_{12}$ (YIG) single crystal at the cryogenic temperature $T$ as low as 2 K based on a RuO$_2$$-$AlO$_x$ on-chip thermometer film.
Externí odkaz:
http://arxiv.org/abs/2311.01711
Within the field of spintronics major efforts are directed towards developing applications for spin-based transport devices made fully out of two-dimensional (2D) materials. In this work we present an experimental realization of a spin-valve device w
Externí odkaz:
http://arxiv.org/abs/2202.09972
Autor:
Hidding, Jan, Tirion, Sytze H., Momand, Jamo, Kaverzin, Alexey, Mostovoy, Maxim, van Wees, Bart J., Kooi, Bart J., Guimarães, Marcos H. D.
Publikováno v:
J. Phys. Mater. 4 04LT01 (2021)
Transition metal dichalcogenides (TMDs) are promising materials for efficient generation of current-induced spin-orbit torques on an adjacent ferromagnetic layer. Numerous effects, both interfacial and bulk, have been put forward to explain the diffe
Externí odkaz:
http://arxiv.org/abs/2107.10621
Autor:
Ghiasi, Talieh S., Kaverzin, Alexey A., Dismukes, Avalon H., de Wal, Dennis K., Roy, Xavier, van Wees, Bart J.
Publikováno v:
Nature Nanotechnology, 2021
The demand for compact, high-speed and energy-saving circuitry urges higher efficiency of spintronic devices that can offer a viable alternative for the current electronics. The route towards this goal suggests implementing two-dimensional (2D) mater
Externí odkaz:
http://arxiv.org/abs/2007.15597
Publikováno v:
Phys. Rev. Applied 10, 044073 (2018)
Electrical control of spin transport is promising for achieving new device functionalities. Here we calculate the propagation of spin currents in a graphene-based spin-current demultiplexer under the effect of drift currents. We show that, using spin
Externí odkaz:
http://arxiv.org/abs/2004.11043
Publikováno v:
Nano Lett.2019
The proximity of a transition metal dichalcogenide (TMD) to graphene imprints a rich spin texture in graphene and complements its high quality charge/spin transport by inducing spin-orbit coupling (SOC). Rashba and valley-Zeeman SOCs are the origin o
Externí odkaz:
http://arxiv.org/abs/1905.01371
Akademický článek
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Publikováno v:
Phys. Rev. B 98, 125422, (2018)
We study the spin injection efficiency into single and bilayer graphene on the ferrimagnetic insulator Yttrium-Iron-Garnet (YIG) through an exfoliated tunnel barrier of bilayer hexagonal boron nitride (hBN). The contacts of two samples yield a resist
Externí odkaz:
http://arxiv.org/abs/1807.08481