Zobrazeno 1 - 10
of 302
pro vyhledávání: '"Kaustav Banerjee"'
An ultra energy-efficient hardware platform for neuromorphic computing enabled by 2D-TMD tunnel-FETs
Publikováno v:
Nature Communications, Vol 15, Iss 1, Pp 1-10 (2024)
Abstract Brain-like energy-efficient computing has remained elusive for neuromorphic (NM) circuits and hardware platform implementations despite decades of research. In this work we reveal the opportunity to significantly improve the energy efficienc
Externí odkaz:
https://doaj.org/article/330c5bd4c89243f4a08c53b32966c065
Publikováno v:
Nature Communications, Vol 12, Iss 1, Pp 1-8 (2021)
Quantum defects in 2D semiconductors are promising quantum light sources, but the required cryogenic temperatures limit their applicability. Here, the authors report a method to create single-photon emitters in monolayer WSe2 operating at temperature
Externí odkaz:
https://doaj.org/article/b3dcbfc11b7a45249855102614287a52
Publikováno v:
npj 2D Materials and Applications, Vol 5, Iss 1, Pp 1-7 (2021)
Abstract Two-dimensional (2D) semiconducting materials, in particular transition-metal dichalcogenides, have emerged as the preferred channel materials for sub-5 nm field-effect transistors (FETs). However, the lack of practical doping techniques for
Externí odkaz:
https://doaj.org/article/6ddcd6ece133465e948e2379bdff4e8c
Autor:
Wei Cao, Kaustav Banerjee
Publikováno v:
Nature Communications, Vol 11, Iss 1, Pp 1-8 (2020)
Negative Capacitance field-effect-transistor has long been touted as a steep-slope logic switch. Here, the authors present a lucid formulation that reveals the intrinsic limitation of NC-FETs in achieving steep-slope switching characteristics and hig
Externí odkaz:
https://doaj.org/article/34a302e79b2546e2b4cb7d2a1788fdd6
Publikováno v:
Journal of Diabetes Research, Vol 2022 (2022)
Excessive intracellular glucose in insulin-independent tissues including nerve, nephron, lens, and retina invites mishandling of metabolism of glucose resulting in a background of increased oxidative stress, advanced glycation end products (AGE) form
Externí odkaz:
https://doaj.org/article/0e81762067af4fe9937cee6ca399887d
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 7, Pp 878-887 (2019)
As a possible pathway to continue Moore's law indefinitely into the future as well as unprecedented beyond-Moore heterogeneous integration, we examine the prospects of building monolithic 3D integrated circuits (M3D-IC) with atomically-thin or 2D van
Externí odkaz:
https://doaj.org/article/cf06b2e6d6ee495da3581a52e5e0aa20
Autor:
Wei Cao, Kaustav Banerjee
Publikováno v:
Nature Communications, Vol 11, Iss 1, Pp 1-1 (2020)
An amendment to this paper has been published and can be accessed via a link at the top of the paper.
Externí odkaz:
https://doaj.org/article/44e309b60b3942cebbbe3af94f3f7360
Publikováno v:
AIP Advances, Vol 4, Iss 6, Pp 067141-067141-9 (2014)
Band-to-band tunnel field-effect-transistors (TFETs) are considered a possible replacement for the conventional metal-oxide-semiconductor field-effect transistors due to their ability to achieve subthreshold swing (SS) below 60 mV/decade. This letter
Externí odkaz:
https://doaj.org/article/ed2b5a8cafca47e4ae9e424839c655a2
Publikováno v:
Physical Review X, Vol 4, Iss 3, p 031005 (2014)
Among various 2D materials, monolayer transition-metal dichalcogenide (mTMD) semiconductors with intrinsic band gaps (1–2 eV) are considered promising candidates for channel materials in next-generation transistors. Low-resistance metal contacts to
Externí odkaz:
https://doaj.org/article/7ebb22e6adde4d669d43a5bc94cd8cb1
Autor:
Arnab Pal, Kunjesh Agashiwala, Junkai Jiang, Dujiao Zhang, Tanmay Chavan, Ankit Kumar, Chao-Hui Yeh, Wei Cao, Kaustav Banerjee
Publikováno v:
MRS Bulletin. 46:1211-1228
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e9dc13233691cdc5b77473d86eb7407a
https://doi.org/10.1557/s43577-022-00270-0
https://doi.org/10.1557/s43577-022-00270-0