Zobrazeno 1 - 10 of 20 pro vyhledávání: '"Kaufel, Gudrun"'
1
15 Gbit/s integrated laser diode driver using 0.3 μm gate length quantum well transistors
Autor: Wang, Zhigong, Berroth, Manfred, Nowotny, Ulrich, Gotzeina, Werner, Hofmann, Peter, Hülsmann, Axel, Kaufel, Gudrun, Köhler, Klaus, Raynor, Brian, Schneider, Joachim
An integrated laser diode driver was realised using enhancement/depletion 0.3 μm recessed-gate AlGaAs/GaAs quantum well transistors. Fully-open eye diagrams were observed at bit rates up to 10 Gbit/s with 50 Ω loads. The maximum DC and modulation c
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::64f1bd76db008a8abc05148cff08cf25
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2
A 2.5 ns 8 x 8-b parallel multiplier using 0.5 μm GaAs/GaAlAs heterostructure field effect transistors
Autor: Berroth, Manfred, Hurm, Volker, Nowotny, Ulrich, Hülsmann, Axel, Kaufel, Gudrun, Köhler, Klaus, Raynor, Brian, Schneider, Joachim
To increase performance of GaAs LSI digital circuits, a 0.5 μm recessed gate process has been developed and utilized for an 8x8-b parallel multiplier. The chip contains about 3000 heterostructure field effect transistors and has a power consumption
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::3614236d2379f9c8b1b231d5c0b55cba
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3
16 x 16 bit parallel multiplier based on 6 K gate array with 0.3 μm AlGaAs/GaAs quantum well transistors
Autor: Thiede, Andreas, Berroth, Manfred, Hurm, Volker, Nowotny, Ulrich, Seibel, Jörg, Gotzeina, W., Sedler, Martin, Raynor, Brian, Köhler, Klaus, Hofmann, Peter, Hülsmann, Axel, Kaufel, Gudrun, Schneider, Joachim
The design and performance of a 16x16 bit parallel multiplier based on a 6 K gate array will be presented. This LSI semicustom IC demonstrates the high potential of the authors' AlGaAs/GaAs quantum well FETs with a gate length of 0.3 μm. The best mu
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::c11849ad838fa010dd7deb6e586ac6b7
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4
15 Gbit/s integrated laser diode driver using 0.3 μm gate length quantum well transistors
Autor: Wang, Zhigong, Berroth, Manfred, Nowotny, Ulrich, Gotzeina, Werner, Hofmann, Peter, Hülsmann, Axel, Kaufel, Gudrun, Köhler, Klaus, Raynor, Brian, Schneider, Joachim
An integrated laser diode driver was realised using enhancement/depletion 0.3 μm recessed-gate AlGaAs/GaAs quantum well transistors. Fully-open eye diagrams were observed at bit rates up to 10 Gbit/s with 50 Ω loads. The maximum DC and modulation c
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=od_______350::cc24f02fc53d66aac8576258822611f0
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5
16 x 16 bit parallel multiplier based on 6 K gate array with 0.3 μm AlGaAs/GaAs quantum well transistors
Autor: Thiede, Andreas, Berroth, Manfred, Hurm, Volker, Nowotny, Ulrich, Seibel, Jörg, Gotzeina, W., Sedler, Martin, Raynor, Brian, Köhler, Klaus, Hofmann, Peter, Hülsmann, Axel, Kaufel, Gudrun, Schneider, Joachim
The design and performance of a 16x16 bit parallel multiplier based on a 6 K gate array will be presented. This LSI semicustom IC demonstrates the high potential of the authors' AlGaAs/GaAs quantum well FETs with a gate length of 0.3 μm. The best mu
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=od_______350::770c8efdb5321640fb51afd14724af14
http://nbn-resolving.de/urn:nbn:de:bsz:93-opus-92393
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6
8.2 GHz bandwidth monolithic integrated optoelectronic receiver using MSM photodiode and 0.5 μm recessed-gate AlGaAs/GaAs HEMTs
Autor: Hurm, Volker, Rosenzweig, Josef, Ludwig, Manfred, Benz, Willi, Berroth, Manfred, Hülsmann, Axel, Kaufel, Gudrun, Köhler, Klaus, Raynor, Brian, Schneider, Joachim
An 8.2 GHz bandwidth monolithic optoelectronic receiver consisting of an MSM photodiode, a transimpedance amplifier, and a 50 Omega output buffer has been fabricated using an enhancement/depletion 0.5 μm recessed-gate AlGaAs/GaAs HEMT process. Succe
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=od_______350::ecb25b79eb6fb163b97da6a4b097d377
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7
20 Gbit/s 2:1 multiplexer using 0.3 μm gate length double pulse doped quantum well GaAs/AlGaAs transistors
Autor: Nowotny, Ulrich, Lang, Manfred, Berroth, Manfred, Hurm, Volker, Hülsmann, Axel, Kaufel, Gudrun, Köhler, Klaus, Raynor, Brian, Schneider, Joachim
A high speed 2:1 multiplexer circuit in source coupled FET logic has been developed and fabricated using a recessed gate process for enhancement and depletion transistors with 0.3μm gate length. First results show a data rate of over 20 Gbit/s at 5
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=od_______350::6115c1b728544295464dcd68890420d6
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8
A 2.5 ns 8 x 8-b parallel multiplier using 0.5 μm GaAs/GaAlAs heterostructure field effect transistors
Autor: Berroth, Manfred, Hurm, Volker, Nowotny, Ulrich, Hülsmann, Axel, Kaufel, Gudrun, Köhler, Klaus, Raynor, Brian, Schneider, Joachim
To increase performance of GaAs LSI digital circuits, a 0.5 μm recessed gate process has been developed and utilized for an 8x8-b parallel multiplier. The chip contains about 3000 heterostructure field effect transistors and has a power consumption
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=od_______350::4c22c13fddeb0e6833aaa90f1acfc139
http://elib.uni-stuttgart.de/handle/11682/8218
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9
Conference
8 W high-efficiency high-brightness tapered diode lasers at 976 nm.
Autor: Kelemen, Márc T., Weber, Jürgen, Kaufel, Gudrun, Moritz, Rudolf, Mikulla, Michael, Weimann, Günter
Publikováno v: Proceedings of SPIE; Nov2006, Issue 1, p61040D-61040D-9, 9p
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