Zobrazeno 1 - 10
of 255
pro vyhledávání: '"Kaufel, G."'
High-peak-power pulsed operation of 2.0 μm (AlGaIn)(AsSb) quantum-well ridge waveguide diode lasers.
Publikováno v:
Journal of Applied Physics; 3/1/2006, Vol. 99 Issue 5, p053105, 3p, 1 Diagram, 5 Graphs
Autor:
Geerlings, E., Rattunde, M., Schmitz, J., Kaufel, G., Wagner, J., Bläsi, B., Kallweit, D., Zappe, H.
A widely tunable (Delta lambda/lambda = 7%) micro-mechanical external cavity GaSb-based diode laser (mu ECL) emitting around 2.1 mu m is presented. A micro-machined grating with a rectangular grating profile, which can be tilted electrostatically, is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______610::7530947ff5b42863dc0865ad0290fa73
https://publica.fraunhofer.de/handle/publica/216845
https://publica.fraunhofer.de/handle/publica/216845
High-peak-power pulsed operation of 2.0 µm (AlGaIn) (AsSb) quantum-well ridge waveguide diode lasers
We have characterized 2.0 µm (aluminium-gallium-indium)(arsenide-antimonide) quantum-well diode lasers in pulsed operation (20-60 ns). A peak power of 1.25 W could be achieved. The near-field distribution on the output facet and the spectral output
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______610::fc6d7dcc8eb8ce42552ecea774a85e5e
https://publica.fraunhofer.de/handle/publica/210754
https://publica.fraunhofer.de/handle/publica/210754
We report on GaSb-based 2.X µm diode lasers with an improved waveguide design, leading to a reduced beam divergence in the fast axis of 44° full width at half maximum (FWHM), compared to 67° FWHM of a conventional broadened waveguide design. 2.3
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______610::8875d50838fabb15347d810463cce6a7
https://publica.fraunhofer.de/handle/publica/210751
https://publica.fraunhofer.de/handle/publica/210751
Autor:
Kelemen, M.T., Weber, J., Rattunde, M., Kaufel, G., Schmitz, J., Moritz, R., Mikulla, M., Wagner, J.
High-power 1.91-µm (AlGaIn)(AsSb) quantum-well diode laser single emitters and linear arrays with improved waveguide design were fabricated and characterized. The use of a rather narrow waveguide core results in a remarkable low fast axis beam diver
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______610::5f58e109d8ddaef8f8a51215d6bd900f
https://publica.fraunhofer.de/handle/publica/210926
https://publica.fraunhofer.de/handle/publica/210926
We report on a widely tunable external cavity GaSb-based diode laser (ECL) in Littrow-configuration. The low (44° full-width at half-maximum) fast axis beam divergence of the quantum-well diode laser employed allowed an efficient coupling to the ext
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______610::571f3a975cdd88f61a9066550f55b32e
https://publica.fraunhofer.de/handle/publica/210793
https://publica.fraunhofer.de/handle/publica/210793
High-power high-brightness 1.93-µm wavelength (AlGaIn)(AsSb) tapered diode lasers with a narrow vertical waveguide design are reported for the first time. A nearly diffraction-limited continuous-wave output power of 1.5 W together with a remarkable
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______610::76f3843922192321395b65243f7808e5
https://publica.fraunhofer.de/handle/publica/210752
https://publica.fraunhofer.de/handle/publica/210752
High-efficiency tapered diode lasers with ridge-waveguide structure emitting at 976 nm have been realised. High wall-plug efficiencies of more than 57% result in output powers of more than 12 W for a single emitter with 3.5 mm resonator length. A nea
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______610::c88b7f6c56ffc177c107c386e0573125
https://publica.fraunhofer.de/handle/publica/208039
https://publica.fraunhofer.de/handle/publica/208039
Autor:
Lang, M., Wang, Z.-G., Lao, Z., Schlechtweg, M., Thiede, A., Rieger-Motzer, M., Sedler, M., Bronner, W., Kaufel, G., Köhler, K., Hülsmann, A., Raynor, B.
Using our 0.2-mu m AlGaAs/GaAs/AlGaAs quantum well high electron mobility transfer (HEMT) technology, we have developed a chip set for 20-40 Gb/s fiber-optical digital transmission systems. In this paper we describe five receiver chips: a limiting am
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______610::c699286a28fe389c35f4b0748cf77842
https://publica.fraunhofer.de/handle/publica/189854
https://publica.fraunhofer.de/handle/publica/189854