Zobrazeno 1 - 10
of 299
pro vyhledávání: '"Katsuyuki Fukutani"'
Publikováno v:
Scientific Reports, Vol 13, Iss 1, Pp 1-11 (2023)
Abstract Light-induced desorption of Rb atoms from a ferrimagnetic Fe $$_3$$ 3 O $$_4$$ 4 (001) surface was studied using a spin-selective optical method, which provides information on the spin polarization, velocity distribution, and amount of the d
Externí odkaz:
https://doaj.org/article/21e93d3bd50a41bfb4dabbfbc946034b
Publikováno v:
Frontiers in Chemistry, Vol 11 (2023)
Molecular hydrogen has two nuclear-spin modifications called ortho and para. Because of the symmetry restriction with respect to permutation of the two protons, the ortho and para isomers take only odd and even values of the rotational quantum number
Externí odkaz:
https://doaj.org/article/9186a3c2e5a0408b9ec85169d883a7ab
Autor:
Masanori Semma, Kazuhiro Gotoh, Markus Wilde, Shohei Ogura, Yasuyoshi Kurokawa, Katsuyuki Fukutani, Noritaka Usami
Publikováno v:
AIP Advances, Vol 10, Iss 6, Pp 065008-065008-9 (2020)
We report on the effect of sputtering deposition of indium tin oxide (ITO) as the transparent conductive oxide layer on the passivation performance of hydrogenated amorphous silicon/crystalline silicon heterojunctions. The influence of sputtering dam
Externí odkaz:
https://doaj.org/article/fe108c2b736b44b7ba87d1439b9aff19
Autor:
Kazuhiro Gotoh, Markus Wilde, Shinya Kato, Shohei Ogura, Yasuyoshi Kurokawa, Katsuyuki Fukutani, Noritaka Usami
Publikováno v:
AIP Advances, Vol 9, Iss 7, Pp 075115-075115-7 (2019)
We studied the effect of deposition temperature on the hydrogen distribution and the passivation performance of hydrogenated amorphous silicon (a-Si:H) coated crystalline silicon (c-Si) heterojunctions as a model of high efficiency solar cell structu
Externí odkaz:
https://doaj.org/article/67cdbb6cdf39417fad5052a21e32fc6a
Autor:
Yuki Sasahara, Ryota Shimizu, Hiroyuki Oguchi, Kazunori Nishio, Shohei Ogura, Hitoshi Morioka, Shin-ichi Orimo, Katsuyuki Fukutani, Taro Hitosugi
Publikováno v:
AIP Advances, Vol 9, Iss 1, Pp 015027-015027-5 (2019)
We investigate the electron transport properties and structures of β-NbHx(010) epitaxial thin films on Al2O3(001) substrates with a variety of hydrogen contents. NbHx epitaxial thin films with x ≥ 0.77 exhibit a hysteresis loop in their resistance
Externí odkaz:
https://doaj.org/article/383699d4f959417d985e0d058ffd7f06
Autor:
Ryota Shimizu, Yuki Sasahara, Ikutaro Hamada, Hiroyuki Oguchi, Shohei Ogura, Tetsuroh Shirasawa, Miho Kitamura, Koji Horiba, Hiroshi Kumigashira, Shin-ichi Orimo, Katsuyuki Fukutani, Taro Hitosugi
Publikováno v:
Physical Review Research, Vol 2, Iss 3, p 033467 (2020)
We present a combined experimental and theoretical study of the charge transport properties of TiH_{x}(x=1.6–2.0) epitaxial thin films. We found that the Hall coefficient of TiH_{x} strongly depends on hydrogen content and unit-cell volume: Nearly
Externí odkaz:
https://doaj.org/article/beb52c23c5734fd9b2c49795329cf6a1
Performance Recovery of Silicon-Avalanche- Photodiode Electron Detector by Low-Temperature Annealing
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 1, Iss 8, Pp 162-165 (2013)
We report that the silicon avalanche photodiode (APD) for electron detection almost fully recovers from the damage caused by electron irradiation by annealing. With the electron irradiation at an energy of 8 keV, a prominent increase of the non-ampli
Externí odkaz:
https://doaj.org/article/c4e3fefd755f40f594919f609dbf4db1
Autor:
Shigeru Kobayashi, Kazunori Nishio, Markus Wilde, Katsuyuki Fukutani, Ryota Shimizu, Taro Hitosugi
Publikováno v:
The Journal of Physical Chemistry C. 127:4684-4688
Publikováno v:
RSC Advances. 13:14089-14096
The length and orientation of graphene nanoribbons (GNRs) synthesized from molecules fixed in monolayers are significantly different from those synthesized from diffusing molecules.
Autor:
Seoungmin Chon, Yuki Sugisawa, Shigeru Kobayashi, Kazunori Nishio, Markus Wilde, Natsuko Kishi, Daiichiro Sekiba, Katsuyuki Fukutani, Taro Hitosugi, Ryota Shimizu
Publikováno v:
The Journal of Physical Chemistry Letters. 13:10169-10174