Zobrazeno 1 - 10
of 181
pro vyhledávání: '"Katsuyoshi Washio"'
Publikováno v:
Materials Research Express, Vol 8, Iss 1, p 016402 (2021)
The fabrication of bifunctional zinc-oxide thin films remains a challenge. Here, we investigate the effects of aluminum-vanadium co-doping on the electrical conductivity and the optical transparency of zinc oxide films. We find that by co-doping, alu
Externí odkaz:
https://doaj.org/article/750b8f7c233541e7aa82d7900f251437
Publikováno v:
Japanese Journal of Applied Physics. 61:108001
This study investigates the antibacterial properties of CuCrO2 (CCO) films fabricated by sputter deposition followed by calcination. The effects of the doped magnesium and the film fabrication in nitrogen atmosphere on both CCO crystallinity and anti
Autor:
Giovanni Capellini, Yuji Yamamoto, Katsuyoshi Washio, Yuhki Itoh, Peter Zaumseil, Markus Andreas Schubert, Bernd Tillack
Publikováno v:
ECS Journal of Solid State Science and Technology. 8:P190-P195
Autor:
Yuji Yamamoto, Giovanni Capellini, Peter Zaumseil, Katsuyoshi Washio, Bernd Tillack, Yuhki Itoh, Markus Andreas Schubert
Publikováno v:
ECS Transactions. 86:259-266
Publikováno v:
Thin Solid Films. 652:16-22
In order to fabricate highly-oriented delafossite CuCrO2 (CCO) thin film which is one of the candidate materials for a p-type transparent conductive oxide, thermal solid-phase crystallization of an amorphous N-doped CCO (CCO:N) film was investigated.
Publikováno v:
Materials Science in Semiconductor Processing. 134:106030
Copper-based delafossite materials such as CuCrO2 are promising candidates for application as p-type transparent conductive oxide because they have high optical transparency and high electrical conductivity. Here, we investigate how the crystallinity
Publikováno v:
Materials Science in Semiconductor Processing. 70:213-218
The influences of O 2 gas addition in argon plasma on reactive RF magnetron sputtering deposition of vanadium-doped ZnO (VZO) films were examined. ZnO or VZO films with vanadium concentration of 2 at% were deposited on a quartz substrate. Vanadium do
Publikováno v:
Materials Science in Semiconductor Processing. 70:167-172
CMOS-compatible low-temperature formation of self-assembled Ge quantum dots (QDs) by carbon (C) mediation via a solid-phase epitaxy (SPE) has been demonstrated. The samples were prepared by a solid-source molecular beam epitaxy (MBE) system. C and Ge
Publikováno v:
Materials Science in Semiconductor Processing. 70:234-238
Reactive sputtering with Ar/N 2 mixture gas was introduced to improve stoichiometry of p-type transparent CuCrO 2 films, and effects of N 2 partial pressure ratio ( α N ) on optical and structural properties were investigated. Film composition was c
Publikováno v:
Materials Science in Semiconductor Processing. 70:223-228
The influences of N2 introduction to a sputtering gas on structural and optical properties of vanadium-doped ZnO (VZO) films, grown by using reactive RF magnetron sputtering on a quartz substrate at room temperature, were investigated. In the VZO fil