Zobrazeno 1 - 10
of 15
pro vyhledávání: '"Katsuya Nishiyama"'
Autor:
Takeshi Seki, Tatsuya Kishi, Naoharu Shimomura, Takayuki Nozaki, Masahisa Yoshikawa, Katsuya Nishiyama, Eiji Kitagawa, Hiroyuki Tomita, Tadaomi Daibou, Toshihiko Nagase, Yoshishige Suzuki, Makoto Nagamine, Sumio Ikegawa, Hiroaki Yoda
Publikováno v:
IEEE Transactions on Magnetics. 47:1599-1602
We studied the spin-transfer switching probability (Psw) in giant magnetoresistance (GMR) device with perpendicular magnetizations using short nanosecond and sub-nanosecond current pulses. A switching time of 510 picoseconds was achieved with the app
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::07d727b378d6c260a6f8a38226ea2ec0
https://doi.org/10.1109/tmag.2011.2105860
https://doi.org/10.1109/tmag.2011.2105860
Autor:
Eiji Kitagawa, Tadaomi Daibou, Makoto Nagamine, Toshihiko Nagase, Katsuya Nishiyama, Hiroaki Yoda, Masahisa Yoshikawa, Tatsuya Kishi
Publikováno v:
IEEE Transactions on Magnetics. 44:2573-2576
Perpendicular L10-FePt/MgO/Fe/L10 -FePt magnetic tunnel junction (MTJ) films with the (001) texture were successfully developed to obtain a large tunnel magnetoresistance (TMR) above 100 % at room temperature. The TMR ratio in the L10-FePt/MgO/Fe/L10
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a4dd50505305562afedf0767e18e94aa
https://doi.org/10.1109/tmag.2008.2003059
https://doi.org/10.1109/tmag.2008.2003059
Publikováno v:
Journal of Applied Physics. 90(8):4085-4088
We have studied the effect of Sm on the magnetic surface anisotropy (MSA) of Pd/Co100−xSmx/Pd (111) trilayers, where Sm content x was varied from 0 to 11. All samples show perpendicular anisotropy due to the strong MSA at the interfaces. The MSA si
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9766754246dc610c79cad31798d437e6
http://hdl.handle.net/10097/47662
http://hdl.handle.net/10097/47662
Autor:
K. Yakushiji, Koji Ando, Katsuya Nishiyama, Tadashi Kai, Shigemi Mizukami, Masatoshi Yoshikawa, Hitoshi Kubota, Makoto Nagamine, Yasuo Ando, Sumio Ikegawa, Eiji Kitagawa, Naoharu Shimomura, Toshihiko Nagase, Hiroaki Yoda, Tatsuya Kishi, Mikihiko Oogane, Junichi Ozeki, Terunobu Miyazaki, Shigeki Takahashi, Masahiko Nakayama, Tadaomi Daibou, Yoshinobu Nakatani, Shinji Yuasa, Yoshishige Suzuki, Minoru Amano, Hisanori Aikawa
Publikováno v:
Current Applied Physics. 10:e87-e89
An Fe-based perpendicular alloy with small damping constant was applied to an MTJ storage layer and small switching current of 9 μA was obtained for a write current width of 5 ms. The efficiency of spin transfer torque writing was proved to be highe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::67caed52d76c86f2d6307513d2d133e8
https://doi.org/10.1016/j.cap.2009.12.021
https://doi.org/10.1016/j.cap.2009.12.021
Autor:
Katsuya Nishiyama, Hiromitsu Mizutani, Masaru Onishi, Yasushi Iyechika, Atsushi Motogaito, Kazumasa Hiramatsu, Hideto Miyake, Takayoshi Maeda, Mitsuhisa Narukawa
Publikováno v:
Journal of Crystal Growth. 221:316-326
Facet structures of GaN grown by epitaxial lateral overgrowth (ELO) via low-pressure metalorganic vapor-phase epitaxy (LP-MOVPE) are controlled by growth conditions such as reactor pressure and growth temperature, where this technique is called facet
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4e0b163ed3503e622a6d80542a7e8e3f
https://doi.org/10.1016/s0022-0248(00)00707-7
https://doi.org/10.1016/s0022-0248(00)00707-7
Autor:
Takeshi Kajiyama, Yoshiaki Asao, Ryousuke Takizawa, Makoto Nagamine, Masayoshi Iwayama, Shigeki Takahashi, Minoru Amano, Toshihiko Nagase, Tatsuya Kishi, Keiji Hosotani, Masahisa Yoshikawa, K. Itagaki, Eiji Kitagawa, Yuui Shimizu, Hisanori Aikawa, K. Tsuchida, T. Ueda, Masahiko Nakayama, Yoshihisa Iwata, Tadashi Kai, Sumio Ikegawa, Hiroaki Yoda, T. Inaba, Katsuya Nishiyama, Naoharu Shimomura, Yuji Ueda
Publikováno v:
IEEE Transactions on Magnetics. 42:2724-2726
Technologies for realizing high density MRAM were developed. First, new circuitry to lower the resistance of programming wires was developed. Second, both MTJ plane shape and cross-sectional structure were optimized to lower the programming current.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8657934197cc0795d507f1cb66d3e5d3
https://doi.org/10.1109/tmag.2006.880081
https://doi.org/10.1109/tmag.2006.880081
Autor:
Makoto Nagamine, Sumio Ikegawa, Katsuya Nishiyama, Hiroyuki Tomita, Yoshishige Suzuki, Hiroaki Yoda, Tadaomi Daibou, Toshihiko Nagase, Masahisa Yoshikawa, N. Takayuki, Eiji Kitagawa, S. Yamashita, Naoharu Shimomura, M. Shinji, Tatsuya Kishi
Publikováno v:
Extended Abstracts of the 2012 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::66e9015a97c817cfe299a9d2bee83d74
https://doi.org/10.7567/ssdm.2012.k-6-2
https://doi.org/10.7567/ssdm.2012.k-6-2
Autor:
K. Ando, Yasuo Ando, Shinji Yuasa, Yoshinobu Nakatani, D. Watanabe, Tatsuya Kishi, Yoshishige Suzuki, Shigemi Mizukami, Masahisa Yoshikawa, Tadaomi Daibou, Hitoshi Kubota, Makoto Nagamine, Mikihiko Oogane, Takayuki Nozaki, Minoru Amano, Toshihiko Nagase, Katsuya Nishiyama, Tadashi Kai, Akio Fukushima, Shigeki Takahashi, Hisanori Aikawa, K. Yakushiji, Masahiko Nakayama, Eiji Kitagawa, Naoharu Shimomura, Terunobu Miyazaki, Jyunichi Ozeki, Sumio Ikegawa, Hiroaki Yoda
Publikováno v:
2011 11th Annual Non-Volatile Memory Technology Symposium Proceeding.
Spin-RAM technologies for operation speed faster than 30 ns, memory capacity larger than 1 Gbits and practically infinite read/write endurance have been developed by using magnetic tunnel junctions with perpendicular magnetization layers. Combination
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::26332ba9b7246b5ef2a943e72026d648
https://doi.org/10.1109/nvmts.2011.6137104
https://doi.org/10.1109/nvmts.2011.6137104
Autor:
Shigemi Mizukami, Makoto Nagamine, Toshihiko Nagase, Hisanori Aikawa, Sumio Ikegawa, Hiroaki Yoda, Tadashi Kai, Tadaomi Daibou, Yoshinobu Nakatani, Jyunichi Ozeki, Tatsuya Kishi, Mikihiko Oogane, Eiji Kitagawa, Masahiko Nakayama, Yasuo Ando, Masahisa Yoshikawa, Yoshishige Suzuki, Naoharu Shimomura, Katsuya Nishiyama, Terunobu Miyazaki, Shinji Yuasa, Shigeki Takahashi, Minoru Amano, K. Ando
Publikováno v:
Extended Abstracts of the 2009 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8466c061398fb5680cbd1dd2293d6604
https://doi.org/10.7567/ssdm.2009.g-6-3
https://doi.org/10.7567/ssdm.2009.g-6-3
Autor:
Hitoshi Kubota, Toshihiko Nagase, Masahiko Nakayama, Eiji Kitagawa, Tadaomi Daibou, Makoto Nagamine, Tadashi Kai, Akio Fukushima, Sumio Ikegawa, Mikihiko Oogane, Shigeki Takahashi, Naoharu Shimomura, Hiroaki Yoda, Terunobu Miyazaki, Tatsuya Kishi, Kay Yakushiji, Katsuya Nishiyama, Masahisa Yoshikawa, Shinji Yuasa, Hisanori Aikawa, Minoru Amano, K. Ando
Publikováno v:
2008 IEEE International Electron Devices Meeting.
We investigate extremely low programming current and fast switching time of a perpendicular tunnel-magnetoresistance (P-TMR) for spin-transfer torque using a P-TMR cell of 50 nm-diameter. A L10-crystalline ordered alloy is used as a free layer that h
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::00cc7a3088211d5d59d7a9a73e7e5965
https://doi.org/10.1109/iedm.2008.4796680
https://doi.org/10.1109/iedm.2008.4796680