Zobrazeno 1 - 10
of 27
pro vyhledávání: '"Katsuya Ishikawa"'
Autor:
Katsuya Ishikawa, Masanori Hirano
Publikováno v:
Journal of Alloys and Compounds. 709:64-71
To investigate the concentration dependence of the optical, up-conversion, and photoluminescence properties of phosphors based on GdNbO 4 co-doped with Er 3+ and Yb 3+ an approach through hydrothermal synthesis route including subsequent heating in a
Autor:
Katsuya Ishikawa, Masanori Hirano
Publikováno v:
Journal of the American Ceramic Society. 100:2814-2821
The effect of concentration of Er3+ on the up-conversion and photoluminescence properties of Gd1.00−xErxNbO4, x=0-0.50 which has monoclinic fergusonite-type structure as a main phase has been investigated, using a processing technique based on hydr
Autor:
Katsuya Ishikawa, Masanori Hirano
Publikováno v:
Journal of Photochemistry and Photobiology A: Chemistry. 316:88-94
Yttrium niobate (YNbO 4 ) up-converting phosphor co-doped with Er 3+ and Yb 3+ was prepared based on the homogeneous precursor nano-sized particles through hydrothermal route and post heat treatment. A single phase of monoclinic fergusonite-type YNbO
Autor:
Katsuya Ishikawa, Masanori Hirano
Publikováno v:
Journal of the Ceramic Society of Japan. 124:42-48
Autor:
Genshu Fuse, Katsuya Ishikawa, Morio Inoue, Yoshiki Fukuzaki, Takashi Namura, Masakatsu Yoshida, Norishige Aoki
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 74:306-310
Ion implantation charging has been studied by evaluation of the threshold voltage shift (ΔVt) of EEPROM devices. The threshold voltage shifted proportionally with the variation of the electron emission current. This method allows the uniformity of c
Autor:
Katsuya ISHIKAWA, Ikuo NAKAMURA
Publikováno v:
JSME international journal. Ser. 2, Fluids engineering, heat transfer, power, combustion, thermophysical properties. 33:97-105
Autor:
Akinori Ishikawa, Katsuya Ishikawa
Publikováno v:
The Proceedings of Conference of Tokai Branch. :37-38
Autor:
Seiji Terada, Kenjin Higaki, Eisaku Kitagawa, Daisuke Kouzaki, Ikuo Nagashima, Eiji Yoshiyama, Katsuya Morimoto, Katsuya Ishikawa
Publikováno v:
ECS Meeting Abstracts. :665-665
not Available.
Publikováno v:
Japanese Journal of Applied Physics. 31:L1422
Damage in silicon crystals implanted with various doses at different acceleration energies has been characterized by Raman scattering and photothermal wave techniques. Depth profiles of the damage in the implanted silicon crystals have been estimated