Zobrazeno 1 - 10
of 77
pro vyhledávání: '"Katsuto TANAHASHI"'
Autor:
Hidetaka Takato, Masaaki Moriya, Yasuhiro Kida, Tomihisa Tachibana, Katsuhiko Shirasawa, Koji Sueoka, Katsuto Tanahashi, Satoshi Ustunomiya
Publikováno v:
ECS Journal of Solid State Science and Technology. 8:P596-P601
Publikováno v:
ECS Journal of Solid State Science and Technology. 7:P562-P566
Autor:
Masaaki Moriya, Tetsuo Fukuda, Katsuhiko Shirasawa, Yasuhiro Kida, Satoshi Utsunomiya, Hidetaka Takato, Katsuto Tanahashi
Publikováno v:
IEEE Journal of Photovoltaics. 7:741-746
The impact of the post-implantation annealing conditions on the electrical characteristics of P-implanted homogeneous emitter silicon solar cells with aluminum-back surface field, 156 mm × 156 mm in size, is investigated. Based on a measurement of t
Publikováno v:
AIP Conference Proceedings; 2019, Vol. 2147 Issue 1, p150001-1-150001-6, 6p
Autor:
Toshimitsu Mochizuki, Hidetaka Takato, Kenshiro Usuki, Katsuhiko Yamaguchi, Katsuto Tanahashi
Publikováno v:
15th International Conference on Concentrator Photovoltaic Systems (CPV-15).
Dissolved oxygen concentration of silicon wafers were evaluated by measuring infrared absorption of dissolved oxygen in attenuated total reflection (ATR) spectra of silicon wafers and compared with transmission-based evaluation. ATR peak height and t
Publikováno v:
15th International Conference on Concentrator Photovoltaic Systems (CPV-15).
Present study mainly focuses on to cut silicon bricks into thin (120 µm) wafers in multi-wire saw with higher cutting yields using thin diamond wires. The diamond wire quality and silicon brick surface conditions are the deciding factors on its prod
Publikováno v:
Materials Science in Semiconductor Processing. 124:105589
Stencil-masked phosphorus implantation on silicon wafers is demonstrated for solar cell applications. Line-shaped window patterns with areas of 156 mm × 156 mm and 125 mm × 125 mm are laid out in the silicon stencil mask with diameters of 200 and 3
Autor:
Hidetaka Takato, Katsuhiko Shirasawa, Shalamujiang Simayi, Katsuto Tanahashi, Supawan Joonwichien
Publikováno v:
Energy Procedia. 92:353-358
We studied the effects of thermal annealing on the interfacial properties of atomic-layer-deposited alumina (Al 2 O 3 ) films and aluminum oxide/silicon nitride (AlO x /SiN x ) stacks on silicon. Thermal treatment was found to have a significant effe
Autor:
Shalamujiang Simayi, Yukichi Horioka, Nobutaka Suzuki, Hidetaka Takato, Tetsuo Fukuda, Katsuhiko Shirasawa, Masaaki Moriya, Katsuto Tanahashi
Publikováno v:
Journal of Crystal Growth. 438:76-80
We succeeded in growing CZ monocrystalline silicon crystals with a longer lifetime than previously achieved. The MCZ technique was not used; instead, we employed melt-phobic quartz crucibles in a conventional CZ furnace. The improved lifetime is the