Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Katsushige Harada"'
Autor:
Kazuhide Hasebe, Hirokazu Ueda, Takehiko Nomura, Tadahiro Ohmi, Y. Morozumi, Shigetoshi Sugawa, Hiroshi Kambayashi, Katsushige Harada, Nariaki Ikeda, Akinobu Teramoto
Publikováno v:
ECS Transactions. 58:155-166
The enhancement mode AlGaN/GaN hybrid MOS-HFETs on Si substrates have been demonstrated. The breakdown voltage of over 1.71 kV was achieved by investigating the epitaxial structure. Furthermore, a high integrity SiO2/Al2O3 gate stack has been demonst
Autor:
Takehiko Nomura, Hiroshi Kambayashi, Akinobu Teramoto, Katsushige Harada, Tadahiro Ohmi, Hirokazu Ueda, Kazuhide Hasebe, Shigetoshi Sugawa, Yuichiro Morozumi
Publikováno v:
MRS Proceedings. 1561
High integrity SiO2/Al2O3 gate stack has been demonstrated for GaN metal-oxide-semiconductor (MOS) transistors. The SiO2 film formed on GaN by the microwave-excited plasma enhanced chemical vapor deposition (MW-PECVD) exhibits good properties compare
Autor:
Hiroshi Kambayashi, Akinobu Teramoto, Kazuhide Hasebe, Hirokazu Ueda, Yuichiro Morozumi, Takehiko Nomura, Tadahiro Ohmi, Katsushige Harada, Shigetoshi Sugawa
Publikováno v:
Japanese Journal of Applied Physics. 52:04CF09
High quality SiO2/Al2O3 gate stack has been demonstrated for GaN metal–oxide–semiconductor (MOS) transistor. We confirmed that Al2O3 could realize a low interface-state density between Al2O3 and GaN, however, the breakdown field was low. By incor