Zobrazeno 1 - 1
of 1
pro vyhledávání: '"Katsumi Uryu"'
Publikováno v:
2012 24th International Symposium on Power Semiconductor Devices and ICs.
Through the simulation, a concept for the next generation MOSFET or IGBT as a single chip solution by combining Super Junction MOSFET (SJ-MOSFET) with Reverse Conducting IGBT (RC-IGBT) is presented. Since the MOSFET's fundamental trade-off relationsh
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f4cab14fd8fa3fd4a5900d3e8531561b
https://doi.org/10.1109/ispsd.2012.6229042
https://doi.org/10.1109/ispsd.2012.6229042
