Zobrazeno 1 - 10
of 51
pro vyhledávání: '"Katsumi Kawasaki"'
Autor:
Makoto Kasu, Yuto Otsubo, Sayleap Sdoeung, Masanori Eguchi, Niloy Chandra Saha, Toshiyuki Oishi, Kohei Sasaki, Chia-Hung Lin, Jun Arima, Katsumi Kawasaki, Jun Hirabayashi
Publikováno v:
Applied Physics Express, Vol 17, Iss 7, p 071004 (2024)
We have found microgrooves on the (001) β -Ga _2 O _3 epitaxial deposited by halide vapor-phase epitaxy in Schottky barrier diodes to be killer defects at the point of reverse leakage-current flow [−10.0 μ A at −64 V]. The microgrooves tended t
Externí odkaz:
https://doaj.org/article/caac118164844bc6a7231631085e9d34
Autor:
Keishi Sugimachi, Yasuharu Ikeda, Akinobu Taketomi, Morimasa Tomikawa, Katsumi Kawasaki, Daisuke Korenaga, Yoshihiko Maehara, Kenji Takenaka
Publikováno v:
Case Reports in Gastroenterology, Vol 2, Iss 1, Pp 76-82 (2008)
We report a case of far-advanced hepatocellular carcinoma (HCC) with situs ambiguous, complex visceral and vascular anomalies, who was successfully managed by extended hemi-hepatectomy. A 67-year-old man was referred to our hospital with a large live
Externí odkaz:
https://doaj.org/article/07376948e34b43b49aa3208f65e48123
Autor:
Sayleap Sdoeung, Kohei Sasaki, Katsumi Kawasaki, Jun Hirabayashi, Akito Kuramata, Makoto Kasu
Publikováno v:
Japanese Journal of Applied Physics. 62:SF1001
This study elucidates the dislocation responsible for the leakage current in a halide vapor phase epitaxial (001) β-Ga2O3 Schottky barrier diode. A high reverse leakage current of −0.98 μA was observed at −100 V as an emission pattern via ultra
Autor:
Sayleap Sdoeung, Kohei Sasaki, Katsumi Kawasaki, Jun Hirabayashi, Akito Kuramata, Makoto Kasu
Publikováno v:
Applied Physics Letters. 120:092101
The elimination of killer defects, which are responsible for the reverse leakage current and breakdown at low voltage in β-gallium oxide (β-Ga2O3) Schottky barrier diodes (SBDs), is crucial for the commercialization of the power devices. We found p
Autor:
Satoshi Masuya, Akito Kuramata, Makoto Kasu, Katsumi Kawasaki, Kohei Sasaki, Sayleap Sdoeung, Jun Hirabayashi
Publikováno v:
Applied Physics Letters. 118:172106
Killer defects are responsible for leakage current and breakdown in β-gallium oxide (β-Ga2O3) Schottky barrier diodes, which are crucial for power device applications. We have found that stacking faults in the halide vapor phase epitaxial (HVPE) (0
Autor:
Jun Hirabayashi, Makoto Kasu, Toshiyuki Oishi, Kohei Sasaki, Akito Kuramata, Sayleap Sdoeung, Katsumi Kawasaki
Publikováno v:
Applied Physics Letters. 117:022106
We utilized ultra-high sensitive emission microscopy to investigate the origin of reverse leakage current of edge-defined film-fed grown (001) β-Ga2O3 Schottky barrier diodes. In the emission patterns, we observed a partially appearing void, having
Autor:
Katsumi Kawasaki, Eishi Funakoshi, Takehiko Shibata, Sayako Maruyama, Minoru Nakayama, Kenji Takeuchi, Noriko Ohkita, Eiko Akaboshi, Fumiaki Ito
Publikováno v:
Biological and Pharmaceutical Bulletin. 35:2017-2022
RecQ5 is a member of the RecQ family of DNA helicases. There are 5 RecQ members in humans. Defects in 3 of them, i.e., BLM, WRN, and RTS, cause Bloom, Werner, and Rothmund-Thomson syndromes, respectively. RECQL1 and RECQL5 have not been associated wi
Publikováno v:
Journal of Cancer Therapy. :424-434
BIM, a key proapoptotic member of the BCL-2 family of proteins, is essential for apoptosis triggered by tyrosine kinase inhibitors (TKIs) of the epidermal growth factor receptor (EGFR). However, the precise molecular mechanism by which EGFR-TKIs indu
Publikováno v:
FEBS Letters. 585:1923-1928
Drosophila melanogaster RecQ5, a member of the RecQ family, is expressed in early embryos. The loss of maternally-derived RecQ5 leads to spontaneous mitotic defects in syncytial embryos. We demonstrate that the mitotic defects are derived from anapha
Autor:
Toshitaka Ota, Hiroyasu Ota, Daisuke Uematsu, Kazushi Ishiyama, Hitoshi Ohta, Masanori Takahashi, Ken Ichi Arai, Susumu Okubo, Nobuyasu Adachi, S Fujisawa, Katsumi Kawasaki
Publikováno v:
IEEE Transactions on Magnetics. 46:1986-1989
For the sensor probe of high frequency magnetic field in GHz region, films were prepared by liquid phase epitaxy technique and ferromagnetic resonances were investigated in high frequency region. Magneto-optical (MO) effect of magnetic garnet was uti