Zobrazeno 1 - 10
of 30
pro vyhledávání: '"Katsumi Eikyu"'
Publikováno v:
2021 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).
SiC is expected to be the next-generation semiconductor material especially for power devices, and some have been put into practical use. However, its stress response has not been completely elucidated, and there are concerns about performance degrad
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::edad0fa185056b3258454dcb709805f6
https://doi.org/10.1109/sispad54002.2021.9592533
https://doi.org/10.1109/sispad54002.2021.9592533
Publikováno v:
2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD).
This paper presents analyses of anomalous behaviors during negative drain input operation of fully isolated nLDMOS. Unexpected I−V curves, i) multiple polarity switching of I S/BG , ii) I SUB leakage before the parasitic PNP activation and iii) abr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::40b21225b2f76368e4dba2b50bd946cc
https://doi.org/10.23919/ispsd50666.2021.9452220
https://doi.org/10.23919/ispsd50666.2021.9452220
Publikováno v:
2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD).
Multi-trench-gate (multi-TG) cell concept is proposed for below 60V class superjunction (SJ) power MOSFETs. The proposed SJ cell improves manufacturability by relaxing too aggressive column pitch narrowing while keeping specific on-state resistance R
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::110a0a9991b6ec7964fa12fc8ef802b3
https://doi.org/10.1109/ispsd46842.2020.9170038
https://doi.org/10.1109/ispsd46842.2020.9170038
Publikováno v:
2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD).
To clarify current and temperature distribution inside single power MOSFET chip, we have developed technology-based computer-aided-design (TCAD)-based, full-chip transient-analysis framework. In conventional design, a single power device chip is assu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a9b60b9074c48bd81fcc53d8d2ecbacd
https://doi.org/10.1109/ispsd.2019.8757577
https://doi.org/10.1109/ispsd.2019.8757577
Study on the improved short-circuit behavior of narrow mesa Si-IGBTs with emitter connected trenches
Autor:
Atsushi Sakai, Yutaka Akiyama, Yoshito Nakazawa, Hitoshi Matsuura, Yasuo Yamaguchi, Katsumi Eikyu
Publikováno v:
2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD).
The impacts of the self-heating and autonomous hole supply adjustment on the short-circuit (SC) behavior of narrow mesa Si-IGBTs are investigated. As reported previously, non-saturated output characteristics of very narrow mesa IGBT, which is origina
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3a8aed2b6694e08d712e3dd92b8a68b5
https://doi.org/10.1109/ispsd.2018.8393711
https://doi.org/10.1109/ispsd.2018.8393711
Publikováno v:
2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD).
This paper proposes a simple and efficient method to improve hot carrier (HC) immunity of p-channel LDMOSFET without degrading typical figure of merits such as breakdown voltage BV and specific on-resistance R sp . The superiority of a novel STI-base
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f61655fbdf75a0df008c22892adfc3bf
https://doi.org/10.23919/ispsd.2017.7988955
https://doi.org/10.23919/ispsd.2017.7988955
Autor:
Yoshito Nakazawa, M. Inuishi, Atsushi Sakai, Yasuo Yamaguchi, Hitoshi Matsuura, Katsumi Eikyu, Yutaka Akiyama
Publikováno v:
2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD).
The very narrow mesa structures based on our 7th generation IGBT process are fabricated and it is found that the device with the narrowest mesa shows very poor short circuit (SC) withstand capability although it suppresses the conduction loss conside
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c015aa8bf67e23f4fc0596728cd863aa
https://doi.org/10.1109/ispsd.2016.7520815
https://doi.org/10.1109/ispsd.2016.7520815
Autor:
Takeshi Okagaki, O. Tsuchiya, Eiji Tsukuda, Hiroyuki Takashino, K. Ishikawa, Katsumi Eikyu, Y. Inoue, T. Hayashi, Shoji Wakahara, Motoaki Tanizawa, T. Uchida
Publikováno v:
IEEE Transactions on Electron Devices. 55:2632-2640
In this paper, we propose a new analytical electron mobility model in strained Si inversion layers suitable for implementation in a drift-diffusion simulator. Using our new model, a numerical study in conjunction with comprehensive bending experiment
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::62f1684f1d8e5443a40bc714b8aa70c2
https://doi.org/10.1109/ted.2008.2003094
https://doi.org/10.1109/ted.2008.2003094
Publikováno v:
IEEE Electron Device Letters. 29:1163-1166
The significance of controlling threshold voltage using nitrogen molecule ion (N2 +) implantation into a silicon substrate was demonstrated for an n-channel MOS with a nickel fully silicided gate electrode and a high-k gate dielectric. We have clarif
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::223c7cf08027fe9d9369ff3f3d9b6108
https://doi.org/10.1109/led.2008.2004416
https://doi.org/10.1109/led.2008.2004416
Autor:
Mikio Tsujiuchi, Makoto Yabuuchi, Takashi Ipposhi, Yuuichi Hirano, Koji Nii, Yasumasa Tsukamoto, Takashi Terada, Kozo Ishikawa, Yukio Maki, Shigeki Obayashi, Katsumi Eikyu, Toshiaki Iwamatsu, Yasuo Inoue, Hirofumi Shinohara, T. Uchida, Hidekazu Oda
Publikováno v:
Japanese Journal of Applied Physics. 47:2092-2096
This paper presents that advanced actively body-bias controlled (Advanced ABC) technology contributes to enhancing operation margins of static random access memory (SRAM). For the first time, significant enhancement of static noise margin (SNM) is su
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e37737ffe3ca7ae97ea619f279dceb54
https://doi.org/10.1143/jjap.47.2092
https://doi.org/10.1143/jjap.47.2092