Zobrazeno 1 - 10
of 195
pro vyhledávání: '"Katsumi, Nakamura"'
Autor:
Masao Nawata, Kazuki Someya, Takafumi Aritomi, Masashi Funada, Katsumi Nakamura, Kazuyoshi Saito, Yoshiya Tanaka
Publikováno v:
Rheumatology & Autoimmunity, Vol 1, Iss 1, Pp 9-17 (2021)
Abstract Background Subjective residual symptoms persist after clinical remission of rheumatoid arthritis (RA) in Japanese patients. Few studies have examined the relationship between these symptoms and subclinical inflammation using high‐sensitivi
Externí odkaz:
https://doaj.org/article/f5e05aaee5b344109c8147ca2bdd373f
Autor:
Shumpei Kosaka, Masao Nawata, Kenji Yamazumi, Aya Nawata, Katsumi Nakamura, Kazuyoshi Saito, Yoshiya Tanaka
Publikováno v:
Modern Rheumatology Case Reports. 7:177-181
Scalp necrosis is a rare complication of giant cell arteritis (GCA); however, it is a predictor of severe disease. In this case study, a patient presented with GCA complicated by polymyalgia rheumatica with scalp necrosis. An 86-year-old woman was ad
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d0745d87f5b3c4d218c83121740ef6d2
https://doi.org/10.1093/mrcr/rxac084
https://doi.org/10.1093/mrcr/rxac084
Autor:
Takafumi Aritomi, Masashi Funada, Kazuki Someya, Yoshiya Tanaka, Kazuyoshi Saito, Katsumi Nakamura, Masao Nawata
Publikováno v:
Rheumatology & Autoimmunity. 1:9-17
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::98536ae8fbed20e033d6846a5666be5e
https://doi.org/10.1002/rai2.12006
https://doi.org/10.1002/rai2.12006
Publikováno v:
2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::916d7b465777f5786397306387786f6c
https://doi.org/10.1109/ispsd49238.2022.9813620
https://doi.org/10.1109/ispsd49238.2022.9813620
Publikováno v:
IEEE Transactions on Electron Devices. 66:4842-4849
In this article, we investigated two typical destruction modes during reverse recovery in power diodes. These phenomena originated, while using numerical simulation analysis, in snap-off behavior and local heating during the recovery period in modern
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e160cf02516748c5b361f0788893e077
https://doi.org/10.1109/ted.2019.2941710
https://doi.org/10.1109/ted.2019.2941710
Publikováno v:
Journal of Applied Physics. 131:125702
We have investigated the formation and decay of hydrogen-related donors (HDs) and irradiation-induced intrinsic defects. N-type m:Cz and FZ silicon wafers, which were irradiated with 2 MeV protons and subsequently annealed at 100–600 °C, were anal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::05df85d70505138ad81dc75624432386
https://doi.org/10.1063/5.0083249
https://doi.org/10.1063/5.0083249
Publikováno v:
Journal of Applied Physics. 130:115704
We investigated the effect of the concentration of carbon, oxygen, and irradiation-induced intrinsic defects on hydrogen-related donor (HD) concentration. Several n-type silicon wafers having different carbon and oxygen concentrations were irradiated
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::935a13c0b7d7858180f01ca2e12f992f
https://doi.org/10.1063/5.0055769
https://doi.org/10.1063/5.0055769
Publikováno v:
Journal of Applied Physics. 129:025701
The growing demand for power devices has led to the use of magnetic field-applied Czochralski (m:Cz) wafers owing to the limited production capacity and available diameters of the traditionally used floating zone (FZ) wafers. Consequently, the influe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e33dedff78d6c04ef7ad67ffe32a5ae5
https://doi.org/10.1063/5.0035260
https://doi.org/10.1063/5.0035260
Publikováno v:
Microelectronics Reliability. 110:113635
This paper discusses the edge termination design of high-voltage insulated gate bipolar transistors with large current turn-off switching operation. We discovered that the phenomena of current crowding and impact ionization act as separated heat sour
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f30f710a6c5e700d5d20374352a32a42
https://doi.org/10.1016/j.microrel.2020.113635
https://doi.org/10.1016/j.microrel.2020.113635
Autor:
Katsumi Nakamura, Kazuhiro Shimizu
Publikováno v:
2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD).
This paper reports for the first time that the freewheeling diode (FWD) with Relaxed Field of Cathode (RFC) technology can achieves excellent total performance by adopting a novel vertical structure. The proposed vertical structure consists of a “L
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b94cdf289a1671310c6bf59846baa408
https://doi.org/10.23919/ispsd.2017.7988940
https://doi.org/10.23919/ispsd.2017.7988940