Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Katsuki Wakatsuki"'
Autor:
Kazuhiro Miyamoto, Baoping Zhang, Katsuki Wakatsuki, Hiroyuki Kato, Yusaburo Segawa, Takafumi Yao, Michihiro Sano
Publikováno v:
physica status solidi (b). 241:2825-2829
High-quality Zn-polar ZnO films were grown on metal-organic chemical-vapor deposition (MOCVD) grown ZnO/a-sapphire templates by plasma-assisted molecular beam epitaxy (MBE). Annealing of the MOCVD-ZnO layer in an O 2 atmosphere improved the surface r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::11de0975ec29b3d7b6f339e3ced0d120
https://doi.org/10.1002/pssb.200405055
https://doi.org/10.1002/pssb.200405055
Publikováno v:
Nanotechnology. 15:S382-S388
ZnO nanorods were epitaxially grown by metalorganic chemical vapour deposition (MOCVD) on sapphire (0001) and substrates. The nanorods were elongated along the ZnO c-axis which was parallel to the substrate normal. Good alignment among the rods was a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5e42df651a0f48cae206ea34ea301ff9
https://doi.org/10.1088/0957-4484/15/6/012
https://doi.org/10.1088/0957-4484/15/6/012
Autor:
Noritaka Usami, Tsuyoshi Ohnishi, Katsuki Wakatsuki, Le-hong Manh, B.P. Zhang, Mikk Lippmaa, Yusaburo Segawa, Masashi Kawasaki
Publikováno v:
Japanese Journal of Applied Physics. 42:2291-2295
Epitaxial ZnO films are grown on sapphire (α-Al2O3) (0001) substrates by metal-organic chemical vapor deposition under 6 and 0.05 Torr using diethyl zinc (DEZn, (C2H5)2Zn) and O2 as precursors and nitrogen as carrier gas. Measurements by X-ray diffr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bbfebb6393b11caa94333c592ea69a76
https://doi.org/10.1143/jjap.42.2291
https://doi.org/10.1143/jjap.42.2291
Publikováno v:
physica status solidi (b). 229:197-201
ZnMgSe alloys and ZnSe/ZnMgSe multi-quantum well (MQW) structures were grown on GaAs (001) substrates by solid-source molecular beam epitaxy (MBE). It was found that the content of Mg in ZnMgSe alloys can be well controlled by adjusting the beam flux
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6929dead5924579a8b424a9f2b90417d
https://doi.org/10.1002/1521-3951(200201)229:1<197::aid-pssb197>3.0.co
https://doi.org/10.1002/1521-3951(200201)229:1<197::aid-pssb197>3.0.co
Publikováno v:
physica status solidi (b). 229:921-924
High-quality ZnO (1120) epitaxial films have been grown on sapphire (0112) substrate by atmospheric pressure MOCVD method using zinc acetylacetonate (Zn(C 5 H 7 O 2 ) 2 ) and oxygen. The crystallinity of the ZnO films was considerably improved with i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1e219d77ad3afe05c61282379a6a997a
https://doi.org/10.1002/1521-3951(200201)229:2<921::aid-pssb921>3.0.co
https://doi.org/10.1002/1521-3951(200201)229:2<921::aid-pssb921>3.0.co
Autor:
Katsuki Wakatsuki, Kentaro Tamura, Le-hong Manh, Masashi Kawasaki, Yusaburo Segawa, B.P. Zhang, Noritaka Usami, Mikk Lippmaa, Hideomi Koinuma, Tsuyoshi Ohnishi
Publikováno v:
Japanese Journal of Applied Physics. 42:L264-L266
We report the control of the in-plane orientation of ZnO epitaxial films grown on as-polished sapphire (?-Al2O3) (0001) substrates by metal organic chemical vapor deposition (MOCVD). When passing certain flows of Zn-precursor over the substrate befor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8fbac4a84e53d2a239ec57d890e7bcfc
https://doi.org/10.1143/jjap.42.l264
https://doi.org/10.1143/jjap.42.l264