Zobrazeno 1 - 10
of 126
pro vyhledávání: '"Katsuhiro Uesugi"'
Autor:
Afishah Alias, Katsuhiro Uesugi, Chee Fuei Pien, Fouziah Md Yassin, Muhammad Hafiz Abu Bakar, Khairul Anuar Mohamad, Lam Mui Li
Publikováno v:
Advanced Science Letters. 23:11564-11566
Autor:
Kengo Ogawa, Hisashi Fukuda, Yoshihiro Tada, Yoshiyuki Shibayama, Ken Sawada, Toshihiko Torigoe, Katsuhiro Uesugi, Tatsuo Iwasa, Koji Nagano
Publikováno v:
IEEJ Transactions on Sensors and Micromachines. 135:490-495
Autor:
Afishah Alias, Wai Yip Lam, Abu Bakar Abd Rahman, Katsuhiro Uesugi, Muhammad Hafiz Abu Bakar, Mui Li Lam, Khairul Anuar Mohamad
Publikováno v:
EPJ Web of Conferences, Vol 162, p 01061 (2017)
In this work, p-CuGaO 2 /n-ZnO heterojunction diodes were deposited by RF powered sputtering method on polyethylene terephthalate (PETP, PET) substrates. Structural, morphology, optical and electrical properties of CuGaO 2 /ZnO heterojunction was inv
Publikováno v:
physica status solidi c. 9:198-201
Delafossite CuGaO2 films have been fabricated by sol-gel method. The stable Cu-Ga-O solutions were prepared by the mixing of Cu-O and Ga-O sol solutions using copper (II) acetate monohydrate and tris-acetylacetonato gallium (III), respectively. Phase
Publikováno v:
e-Journal of Surface Science and Nanotechnology. 8:250-253
Organic thin-film transistor (OTFT) memory devices were fabricated with nanocrystal carbon (nc-C) dots incorporated into the pentacene/oxide interface in the active layer. The nc-C dots were arranged precisely in order on the OTFT channel region by a
Publikováno v:
e-Journal of Surface Science and Nanotechnology. 7:808-812
Organic memory-transistor devices were fabricated from pentacene-based organic thin-film transistors (OTFTs) with a fullerene layer. The current-voltage (I-V) characteristics show that the fabricated OTFTs exhibit a unipolar property with p-channel c
Publikováno v:
e-Journal of Surface Science and Nanotechnology. 7:665-668
Organic semiconductor nonvolatile memory devices were successfully fabricated from organic thin-film transistors (OTFTs) embedded with nanocrystal carbon (nc-C) dots incorporating pentacene as an active layer. The nc-C dots were arranged in the chann
Autor:
Hidekazu Kumano, Kazunori Tanaka, Ikuo Suemune, Tatsushi Akazaki, Masafumi Jo, Eiichi Hanamura, Katsuhiro Uesugi, Michiaki Endo
Publikováno v:
Microelectronics Journal. 39:344-347
Generation of entangled photon pairs from semiconductor quantum dots (QDs) is highly desirable for realizing practical solid-state photon sources for quantum information processing and quantum cryptography. However, the energy splitting of exciton st
Publikováno v:
Surface Science. 601:5112-5115
Metal‐insulator‐semiconductor (MIS) structures with a nanocrystal carbon (nc-C) embedded in SiO2 thin films were fabricated using a focused ion beam (FIB) system with a precursor of low-energy Ga + ion and carbon source. The crystallinity of nc-C
Autor:
Mui Li Lam, Abu Bakar, Muhammad Hafiz, Wai Yip Lam, Alias, Afishah, Abd Rahman, Abu Bakar, Mohamad, Khairul Anuar, Katsuhiro Uesugi
Publikováno v:
EPJ Web of Conferences; 2017, Vol. 162, p1-4, 4p, 4 Graphs