Zobrazeno 1 - 10
of 54
pro vyhledávání: '"Katsuhiro Tsukamoto"'
Autor:
Masahiro Shimizu, T. Nishimura, Kazuo Horie, A. Ishibashi, Yutaro Yamaguchi, Youichi Akasaka, Katsuhiro Tsukamoto
Publikováno v:
IEEE Transactions on Electron Devices. 40:179-186
0.6- mu m CMOS technologies were developed on thin SIMOX film and applied to a 16 K gate CMOS gate array. High-speed operation with low power consumption characteristics was verified with ring oscillators on the thin SOI CMOS gate array with V/sub D/
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bb7851ec8e5b226313637e5f2a102a48
https://doi.org/10.1109/16.249442
https://doi.org/10.1109/16.249442
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. :584-591
The “well engineering” of a retrograde twin well formed by high-energy ion implantation for 0.5 μm CMOS is demonstrated to be quite useful in improving many device characteristics, such as leakage current reduction, soft-error immunity, low latc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::21cb38c32c01fdd22b197730e6c35d36
https://doi.org/10.1016/0168-583x(91)95283-j
https://doi.org/10.1016/0168-583x(91)95283-j
Publikováno v:
Technical Digest., International Electron Devices Meeting.
A novel isolation technology, called buried insulator between source/drain polysilicon (BIPS), is described. The BIPS isolation structure consists of refilling CVD (chemical vapor deposition) oxides in openings between source/drain polysilicon patter
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::358a3f94cd90ced87c19b0e3587d2381
https://doi.org/10.1109/iedm.1988.32760
https://doi.org/10.1109/iedm.1988.32760
Autor:
K. Hosono, Yaichiro Watakabe, Hiroaki Morimoto, Haruhiko Kusunose, Katsuhiro Tsukamoto, M. Nakajima, Nobuyuki Yoshioka, Junji Miyazaki
Publikováno v:
Proceedings of IEEE International Electron Devices Meeting.
Attenuated phase-shifting mask with a single-layer absorptive shifter with MoSiO or MoSiON films has been developed. These films satisfies the condition both the 180-degree phase shift and the transmittance between 5 and 20%. Conventional mask proces
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f59de9a20f6e7dced2e99eb9a5c61df9
https://doi.org/10.1109/iedm.1993.347227
https://doi.org/10.1109/iedm.1993.347227
Publikováno v:
International Electron Devices Meeting 1991 [Technical Digest].
The authors describe an MOCVD (metal-organic chemical vapor deposition) method for forming PZT thin films using novel metal-organic source materials. Bisdipivaloylmethanato lead, zirconium-t-butoxide, and titanium tetra-i-propoxide were used as sourc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eeb94d3d1d5e6cb7d3ad26740c063356
https://doi.org/10.1109/iedm.1991.235296
https://doi.org/10.1109/iedm.1991.235296
Publikováno v:
International Technical Digest on Electron Devices.
The authors studied the characteristics of the junction leakage current of diodes having a buried layer formed by high-energy boron, phosphorus, and arsenic implantation. A remarkable decrease in junction leakage current to the level comparable to th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e3d065ae9a6b27bf95298f268764479e
https://doi.org/10.1109/iedm.1990.237179
https://doi.org/10.1109/iedm.1990.237179
Publikováno v:
Applied Physics Letters. 61:1682-1684
Defects induced by B+ implantation at 0.7 MeV into n+p diodes were investigated using leakage current and deep level transient spectroscopy (DLTS). Leakage current increases drastically by implantation to a dose of more than 3×1013 cm−2. DLTS spec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::747bff4615b720e696edaf599c4f70b0
https://doi.org/10.1063/1.108450
https://doi.org/10.1063/1.108450
Autor:
Yaichiro Watakabe, Keiichi Murayama, Kunihiro Hosono, Katsuhiro Tsukamoto, Haruhiko Kusunose, Hiroaki Morimoto, Wataru Wakamiya, Masayuki Nakajima, Nobuyuki Yoshioka, Junji Miyazaki
Publikováno v:
SPIE Proceedings.
Attenuated phase-shifting mask with a single-layer absorptive shifter of CrO, CrON, MoSiO or MoSiON films has been developed. The optical parameter of these films can be controlled by the condition of sputtering deposition. These films satisfy the sh
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6053f75c39903c7fc526f140c7e2c269
https://doi.org/10.1117/12.175405
https://doi.org/10.1117/12.175405
Autor:
Hiroaki Morimoto, Junji Miyazaki, Atsumi Yamaguchi, Nobuyuki Yoshioka, Katsuhiro Tsukamoto, Keiji Fujiwara
Publikováno v:
SPIE Proceedings.
This paper discusses the effect of duty ratio of line and space patterns and the coherency of illumination for the projection system on the lithographic characteristics, which must be taken into consideration in designing LSI patterns with an alterna
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4dccc717fb7ecc8818129822d7939d99
https://doi.org/10.1117/12.150462
https://doi.org/10.1117/12.150462
Autor:
Akira Tokui, Kazuya Kamon, Nobuyuki Yoshioka, Maaike Op de Beeck, Katsuhiro Tsukamoto, Masato Fujinaga, Tetsuro Hanawa
Publikováno v:
SPIE Proceedings.
Three types of phase-shifting mask designs are studied with respect to their suitability to print periodical L/S structures. The evaluation criteria are DOF, exposure latitude, linearity, and image contrast and slope of the intensity profile. Mask-ma
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f5a3d4dc3565df4e1c809f5505f5b22d
https://doi.org/10.1117/12.44781
https://doi.org/10.1117/12.44781