Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Katsuhiro Kishimoto"'
Publikováno v:
Crystals, Vol 7, Iss 5, p 123 (2017)
The interface formation mechanisms of AlN films on sapphire substrates grown by the elementary source vapor phase epitaxy (EVPE) method, which is a new AlN bulk fabrication method using Al and N2 as precursors, are investigated. Supplying N2 after th
Externí odkaz:
https://doaj.org/article/71ee5cda5f4a4e85a8792ba067782973
Publikováno v:
Crystal Growth & Design. 16:6337-6342
Elementary source vapor phase epitaxy (EVPE) is an environmentally friendly method for producing aluminum nitride (AlN) crystals from Al metal and N2 gas. Here, we demonstrate that the morphology of AlN grown by EVPE is predominantly affected by the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::187aff87611dece403c5b32ec2e4498b
https://doi.org/10.1021/acs.cgd.6b00979
https://doi.org/10.1021/acs.cgd.6b00979
Publikováno v:
Applied Physics Letters. 117:062101
A carbon-containing amorphous film is deposited on metalorganic-vapor-phase-epitaxy-grown AlN or AlGaN templates by flowing propane, aluminum, and nitrogen gases at 1010 °C. The deposited ∼1-nm-thick layers show p-type conductivity with a sheet ca
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5b0d6c2c2f78e034c6f7afce697c3c57
https://doi.org/10.1063/5.0017703
https://doi.org/10.1063/5.0017703
Publikováno v:
Applied Physics Express. 13:015512
Carbon doping can form surface p-type conductive layers on AlN with high sheet carrier densities (~1013 cm−2). Current–voltage measurements indicate carrier injection occurs through the surface conductive layer into AlN, suggesting that the surfa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::396e3892225ae95d59d4fc99128aa866
https://doi.org/10.7567/1882-0786/ab6589
https://doi.org/10.7567/1882-0786/ab6589
Publikováno v:
Optics Express. 25:1769
application/pdf
Article
Optics Express. 2017, 25 (3), p.1769-1777
Article
Optics Express. 2017, 25 (3), p.1769-1777
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1b97c94136641b99868913f2b8a921e8
https://doi.org/10.1364/oe.25.001769
https://doi.org/10.1364/oe.25.001769
Autor:
Makoto Muto, Matsushima Daisuke, Katsuhiro Kishimoto, Demura Kensuke, Nakamura Satoshi, Suzuki Masafumi
Publikováno v:
SPIE Proceedings.
The extreme ultraviolet (EUV) exposure technology has drawn a high degree of attention as an exposure technique for a 16 nm half-pitch generation and beyond. EUV masks, unlike conventional transmissive masks, are categorized as a reflective type mask
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b84a64bbff4bf450f63b09a17919aa23
https://doi.org/10.1117/12.2070235
https://doi.org/10.1117/12.2070235
Publikováno v:
Crystals (2073-4352); May2017, Vol. 7 Issue 5, p123, 7p
Publikováno v:
Crystal Growth & Design; Nov2016, Vol. 16 Issue 11, p6337-6342, 6p