Zobrazeno 1 - 10
of 257
pro vyhledávání: '"Katsuhiro Akimoto"'
Publikováno v:
Frontiers in Materials, Vol 9 (2022)
Silicon (Si) films were obtained through aluminothermic reduction of the quartz (SiO2) substrates, where the surface of the quartz in contact with the deposited aluminum (Al) layer has been converted to film Si during high-temperature annealing follo
Externí odkaz:
https://doaj.org/article/2ca6ddf775e640178315f4d9bc89dfcf
Autor:
Muhammad Monirul Islam, Hajer Said, Ahmed Hichem Hamzaoui, Adel Mnif, Takeaki Sakurai, Naoki Fukata, Katsuhiro Akimoto
Publikováno v:
Nanomaterials, Vol 12, Iss 3, p 363 (2022)
Silicon (Si) films were deposited on low-cost graphite substrates by the electrochemical reduction of silicon dioxide nanoparticles (nano-SiO2) in calcium chloride (CaCl2), melted at 855 °C. Cyclic voltammetry (CV) was used to analyze the electroche
Externí odkaz:
https://doaj.org/article/4a102f97a5774c40b35d95bf1e8ef8b6
Autor:
Mohammad Abdul Halim, Muhammad Monirul Islam, Xianjia Luo, Takeaki Sakurai, Noriyuki Sakai, Takuya Kato, Hiroki Sugimoto, Hitoshi Tampo, Hajime Shibata, Shigeru Niki, Katsuhiro Akimoto
Publikováno v:
AIP Advances, Vol 6, Iss 3, Pp 035216-035216-8 (2016)
A comparative study with focusing on carrier recombination properties in Cu2ZnSn(S,Se)4 (CZTSSe) and the CuInGaSe2 (CIGS) solar cells has been carried out. For this purpose, electroluminescence (EL) and also bias-dependent time resolved photoluminesc
Externí odkaz:
https://doaj.org/article/bc6622679b5f47868f45e3e1ccbd83e9
Autor:
Wei Li, Bo Tan, Wenwu Wang, Katsuhiro Akimoto, Gang Hu, Lianghuan Feng, Jingquan Zhang, Xia Hao, Yunfan Wang, Muhammad Monirul Islam, Wei Fu, Takeaki Sakurai, Lili Wu, Hamidou Tangara, Chuang Li, Chuanqi Li
Publikováno v:
Journal of Materials Science: Materials in Electronics. 32:19083-19094
An evaporated CdSe layer was incorporated with a very thin CdS layer (40 nm) to optimize the performance of CdTe solar cells. Se alloys with narrower bandgaps were formed in the CdTe deposition and annealing process. With the incorporation of the CdS
Autor:
Muhammad Monirul Islam, Hajer Said, Ahmed Hichem Hamzaoui, Adel Mnif, Takeaki Sakurai, Naoki Fukata, Katsuhiro Akimoto
Publikováno v:
Nanomaterials; Volume 12; Issue 3; Pages: 363
Nanomaterials, Vol 12, Iss 363, p 363 (2022)
Nanomaterials, Vol 12, Iss 363, p 363 (2022)
Silicon (Si) films were deposited on low-cost graphite substrates by the electrochemical reduction of silicon dioxide nanoparticles (nano-SiO2) in calcium chloride (CaCl2), melted at 855 °C. Cyclic voltammetry (CV) was used to analyze the electroche
Autor:
Chuang Li, Xia Hao, Yulu He, Jingquan Zhang, Lili Wu, Wei li, Wenwu Wang, Lianghuan Feng, IslamMuhammad Monirul, Katsuhiro Akimoto, Takeaki Sakurai
Publikováno v:
Extended Abstracts of the 2020 International Conference on Solid State Devices and Materials.
Publikováno v:
Hydrometallurgy. 179:207-214
This study presents a novel chemical process for the extraction of high purity silica from diatomite. The process involves leaching of raw diatomite with acid prior to alkali extraction, solubilization of treated diatomite with alkali solution to for
Autor:
Imane Abdellaoui, Cherif Moslah, Takeaki Sakurai, Katsuhiro Akimoto, Mohamed Ksibi, Saad Hamzaoui, Muhammad Monirul Islam
Publikováno v:
Thin Solid Films. 654:1-10
We have reported electrodeposition of silicon films on metal substrates obtained through electrochemical reduction of silicon dioxide nanoparticles (SiO2-NP) at high temperature of 855 °C in the calcium chloride (CaCl2) melt. Electrodeposition was c
Autor:
Katsuhiro Akimoto, Takeaki Sakurai, Shigeru Niki, Shogo Ishizuka, Hajime Shibata, Muhammad Monirul Islam
Publikováno v:
Nanoscience and Nanotechnology Letters. 10:559-564
Autor:
Shigeru Niki, Yutaro Takabayashi, Shogo Ishizuka, Takeaki Sakurai, Shenghao Wang, Hajime Shibata, Muhammad Monirul Islam, Takehiro Nazuka, Hideki Hagiya, Katsuhiro Akimoto
Publikováno v:
Journal of Electronic Materials. 47:4944-4949
For copper indium gallium selenide [Cu(In1−x,Gax)Se2, CIGS]-based solar cells, defect states or impurity phase always form due to both the multinary compositions of CIGS film and the difficulty of controlling the growth process, especially for high