Zobrazeno 1 - 10
of 12
pro vyhledávání: '"Katsuhiko Shibusawa"'
Autor:
Katsuhiko Shibusawa, Toshiki Obara, Yuki Kumagai, Daiki Kimoto, Shigetoshi Sugawa, Xiang Li, Rihito Kuroda, Tomoyuki Suwa, Akinobu Teramoto, Yutaka Kamata, Naoya Akagawa, Tetsuya Goto
Publikováno v:
ECS Journal of Solid State Science and Technology. 5:P67-P72
Autor:
S. Watabe, S. Sugawa, Katsuhiko Shibusawa, M. Toita, Akinobu Teramoto, Naoto Miyamoto, Kenichi Abe, Yutaka Kamata, Tadahiro Ohmi
Publikováno v:
AIP Conference Proceedings 19th International Conference on NOISE AND FLUCTUATIONS-ICNF2007. 922:115-118
In this paper, we developed an advanced Test Element Group (TEG) which can measure Random Telegraph Signal (RTS) noise in over 106 nMOSFETs including various gate sizes with high accuracy in a very short time. We measured and analyzed these noises st
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing. 18:546-553
Cathodoluminescence (CL) spectroscopy was applied to optimize the shallow trench isolation (STI) process. The analysis of dislocations with CL spectroscopy could be performed during STI process steps. Then, the result of CL analysis was associated wi
Publikováno v:
Extended Abstracts of the 2009 International Conference on Solid State Devices and Materials.
Autor:
S. Watabe, Takafumi Fujisawa, Tadahiro Ohmi, Akinobu Teramoto, Kenichi Abe, Yutaka Kamata, S. Sugawa, Katsuhiko Shibusawa
Publikováno v:
Extended Abstracts of the 2009 International Conference on Solid State Devices and Materials.
Autor:
Katsuhiko Shibusawa, S. Watabe, Naoto Miyamoto, Shigetoshi Sugawa, Tadahiro Ohmi, Akinobu Teramoto, Kenichi Abe, Yutaka Kamata, M. Toita
Publikováno v:
2007 IEEE Symposium on VLSI Technology.
In this paper, we propose an advanced Test Element Group (TEG) which can measure a large number (10 MOSFETs) of electrical characteristics or noise characteristics with high accuracy in a very short time (0.2 sec/frame). We analyzed fluctuations of t
Autor:
Tomoyuki Suwa, Akinobu Teramoto, Katsuhiko Shibusawa, Yutaka Kamata, Tadahiro Ohmi, Shigetoshi Sugawa, Rihito Kuroda, Naoya Akagawa, Yuki Kumagai, Daiki Kimoto, Tetsuya Goto
Publikováno v:
ECS Meeting Abstracts. :1354-1354
Atomically flattening of semiconductor/gate insulator interface has received much attention for complementary metal oxide semiconductor (CMOS) devices, because such smooth interface can increase field effect mobility by reducing interface roughness s
Autor:
Tadahiro Ohmi, Daiki Kimoto, Katsuhiko Shibusawa, Naoya Akagawa, Tetsuya Goto, Tomoyuki Suwa, Rihito Kuroda, Akinobu Teramoto, Shigetoshi Sugawa, Toshiki Obara, Yutaka Kamata, Yuki Kumagai, Xiang Li
Publikováno v:
Japanese Journal of Applied Physics. 54:04DA04
By introducing high-purity and low-temperature Ar annealing at 850 °C, atomically flat Si surfaces of silicon-on-insulator (SOI) and shallow-trench-isolation (STI)-patterned wafers were obtained. In the case of the STI-patterned wafer, this low-temp
Autor:
Tsuneo Ajioka, Naoto Nagai, Keiko Matsuda, Toshikazu Mizukoshi, Ryuichi Sugie, Masanobu Yoshikawa, Katsuhiko Shibusawa, Shoji Yo
Publikováno v:
Extended Abstracts of the 2005 International Conference on Solid State Devices and Materials.
Autor:
Takafumi Fujisawa, Tadahiro Ohmi, Katsuhiko Shibusawa, Shunichi Watabe, Akinobu Teramoto, Kenichi Abe, Yutaka Kamata, Shigetoshi Sugawa
Publikováno v:
Japanese Journal of Applied Physics. 49:04DC07
Random telegraph signal (RTS) noise has become one of the most important problems in the continuous scaling down of field-effect transistors (FETs). In this study, we investigate experimentally the relationship between RTS amplitude and channel dopin