Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Katsuhiko Mitani"'
Publikováno v:
Applied Physics Letters. 65:1165-1167
We investigated the damage induced by exposing AlxGa1−xAs (x=0.30, 0.15) and GaAs layers to electron cyclotron resonance SF6/CHF3 plasma and the repair of this damage by annealing. After plasma exposure the sheet resistance of all these samples is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::080ad9babb19c4a8c05ad8fddfd62028
https://doi.org/10.1063/1.112133
https://doi.org/10.1063/1.112133
Autor:
K. Ishikawa, Katsuhiko Mitani, Hiroo Masuda, Kazuhiro Mochizuki, Masaru Miyazaki, C. Kusano, Masahiko Kawata
Publikováno v:
[1991] GaAs IC Symposium Technical Digest.
A fabrication technology for AlGaAs/GaAs HBTs (heterojunction bipolar transistors) with low base resistance and low collector capacitance is developed. Self-aligned AlGaAs/GaAs HBTs show a high cutoff frequency of 45 GHz and maximum oscillation frequ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3f97d145ec1df1f2f7ba7b737cb00471
https://doi.org/10.1109/gaas.1991.172648
https://doi.org/10.1109/gaas.1991.172648
Publikováno v:
IEEE Electron Device Letters. 13:209-210
The authors describe a planar process for the AlGaAs/GaAs HBTs in which collector vias are buried selectively, even to the base layers, with chemical vapor deposited tungsten (CVD-W) films. By using WF/sub 6//SiH/sub 4/ chemistry, W could be deposite
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cfe82acc5d018a3520efc9574c2a866f
https://doi.org/10.1109/55.145023
https://doi.org/10.1109/55.145023
Publikováno v:
Japanese Journal of Applied Physics. 34:3970
After SF6/CHF3 plasma exposure, the sheet resistance of Si-doped GaAs layers is higher because of carrier reduction near the surface and sputter etched surface, and this electrical and physical damage is found to depend on rf-power and µ-wave power.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::47c9ae552f125da7d899fa046525b77e
https://doi.org/10.1143/jjap.34.3970
https://doi.org/10.1143/jjap.34.3970
Publikováno v:
Japanese Journal of Applied Physics. 30:L266
The surface recombination current with an ideality factor of unity was clearly observed in AlGaAs/GaAs abrupt heterojunction bipolar transistors (HBTs) with the uniform base structure. This was derived from the difference in the base current of HBTs
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4166168d8a98baae05870341a60f6844
https://doi.org/10.1143/jjap.30.l266
https://doi.org/10.1143/jjap.30.l266
Publikováno v:
Japanese Journal of Applied Physics. 22:677
The doping of an antistatic agent (As-1) into high-density polyethylene (HD-PE) strongly enhanced the charging currents and the thermally stimulated currents (TSC). Doped HD-PE showed a charging current peak due to the transient SCLC (space-charge-li
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e36cd8269959b8b6dd40609970622840
https://doi.org/10.1143/jjap.22.677
https://doi.org/10.1143/jjap.22.677
Akademický článek
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Autor:
Mochizuki, Kazuhiro, Masuda, Hiroshi, Kawata, Masahiko, Katsuhiko Mitani, Katsuhiko Mitani, Chuushiro Kusano, Chuushiro Kusano
Publikováno v:
Japanese Journal of Applied Physics; February 1991, Vol. 30 Issue: 2 pL266-L266, 1p
Akademický článek
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