Zobrazeno 1 - 10
of 61
pro vyhledávání: '"Katsuhiko Hieda"'
Autor:
Eiji Hayashi, Ruben Vanroosbroeck, Takashi Doi, Katsuhiko Hieda, Hiroto Kubo, Nishimura Isao, Sara Peters
Publikováno v:
Journal of Photopolymer Science and Technology. 28:411-414
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1b2cac96c9a096f04b9a533be8aaae8f
https://doi.org/10.2494/photopolymer.28.411
https://doi.org/10.2494/photopolymer.28.411
Autor:
Katsuhiko Hieda, Tomokazu Miyazaki, Erik Sohn, Nishimura Isao, Ruben Van Roosbroeck, Bivragh Majeed, Sara Peeters, Koen de Wijs, Chengxun Liu, John O'Callaghan, Karolien Jans, Josine Loo, Liesbet Lagae, Kenji Hoshiko
Publikováno v:
Biomedical microdevices. 20(1)
Integration of microelectronics with microfluidics enables sophisticated lab-on-a-chip devices for sensing and actuation. In this paper, we investigate a novel method for in-situ microfluidics fabrication and packaging on wafer level. Two novel photo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e1c50b8dc7a05fbf57e6e40da25178c4
https://pubmed.ncbi.nlm.nih.gov/29159519
https://pubmed.ncbi.nlm.nih.gov/29159519
Autor:
Katsuhiko Hieda
Publikováno v:
Journal of the Japan Society for Precision Engineering. 74:431-434
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7d71bb21647bd0158d60e39a582868dd
https://doi.org/10.2493/jjspe.74.431
https://doi.org/10.2493/jjspe.74.431
Autor:
Yong Wang, Kinji Yamada, Tsutomu Shimokawa, Motoyuki Shima, Tetsuo Tominaga, Takashi Miyamatsu, Atshushi Nakamura, Hiroki Nakagawa, Yutaka Makita, Taiichi Furukawa, Katsuhiko Hieda
Publikováno v:
Journal of Photopolymer Science and Technology. 19:641-646
ArF immersion lithography using a high-refractive-index fluid (HIF) is considered to be one of the most promising candidates for hp38nm or below. We have developed JSR HIL-001 and HIL-002 as new immersion fluids, the refractive index and transmittanc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::addfb1e7e4640a25967d39991766cb4b
https://doi.org/10.2494/photopolymer.19.641
https://doi.org/10.2494/photopolymer.19.641
Publikováno v:
Polymers for Advanced Technologies. 17:122-130
Recently 193 nm immersion lithography is considered the most promising next generation technology which will enable a 45 nm and below node device to be manufactured. This will lead to not only depth of focus (DOF) enlargement, but immersion lithograp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aa9f981b321b1c18c754ea7045286772
https://doi.org/10.1002/pat.677
https://doi.org/10.1002/pat.677
Autor:
Katsuhiko Hieda, Koichi Hashimoto, Daisuke Matsunaga, Toshiya Suzuki, Yoshiaki Fukuzumi, Yusuke Kohyama, Masahiro Kiyotoshi
Publikováno v:
Japanese Journal of Applied Physics. 42:1943-1948
Ta2O5 is the most promising high-k dielectric candidate for metal-insulator-metal (MIM) capacitors, but its dielectric relaxation (DR) currents may cause irrecoverable charge loss, although DR is a universal phenomenon of normal dielectrics. Therefor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::086bd0de4b4e4d1c8e8b09e7d9c8570b
https://doi.org/10.1143/jjap.42.1943
https://doi.org/10.1143/jjap.42.1943
Autor:
Katsuhiko Hieda, Shigeyoshi Watanabe, Koji Sakui, Takahiko Hara, Tsuneaki Fuse, Seiichi Aritome
Publikováno v:
IEEE Journal of Solid-State Circuits. 28:4-9
A BiCMOS circuit technology featured by a novel bit-line sense amplifier has been developed. The bit-line sense amplifier is composed of a BiCMOS differential amplifier, the impedance-converting means featured by the CMOS current mirror circuit or th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::03737b14f81b853e6effb5c69c8cc9c3
https://doi.org/10.1109/4.179197
https://doi.org/10.1109/4.179197
Publikováno v:
Applied optics. 19(18)
By modifying the surface plasma mode on a bare metal surface with an ultrathin film deposited on the metal, we measured the film thickness by attenuated total reflection (ATR). Various factors causing measurement errors are estimated with numerical e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::67a3d3d927db922ae95f1b5bbdec8818
https://pubmed.ncbi.nlm.nih.gov/20234570
https://pubmed.ncbi.nlm.nih.gov/20234570
Autor:
Hiroshi Takato, F. Masuoka, Katsuhiko Hieda, Kazumasa Sunouchi, Akihiro Nitayama, Fumio Horiguchi
Publikováno v:
IEEE Transactions on Electron Devices. 39:671-676
The double lightly doped drain concave (DLC) MOSFET has been developed for sub-half-micrometer MOSFETs which can operate at a 5-V supply voltage. This structure has an impurity profile of n/sup +/-n/sup -/-p/sup -/-p along the sidewall of the groove.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4b5c96347e6b4ce87075d3d6a61c9fa0
https://doi.org/10.1109/16.123493
https://doi.org/10.1109/16.123493
Autor:
Kohji Tsunoda, Daisuke Matsunaga, Kazuhiro Eguchi, Katsuhiko Hieda, Yoshiaki Fukuzumi, Katsuaki Natori, Mitsuaki Izuha, Jun Lin
Publikováno v:
Applied Physics Letters. 76:2430-2432
Forming gas (3%H2+97%N2) anneals result in decomposition of SrRuO3 and increase the leakage current of the SrRuO3/(Ba, Sr)TiO3/SrRuO3 capacitor. However, we show that 0.5% O2 addition to the forming gas (3%H2+0.5%O2+96.5%N2) does not cause degradatio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a1039945e1b6b97399b7eaf3fea1378c
https://doi.org/10.1063/1.126366
https://doi.org/10.1063/1.126366