Zobrazeno 1 - 10
of 77
pro vyhledávání: '"Katsouras, I."'
Autor:
Katsouras, I., Najafi, A., Asadi, K., Kronemeijer, A.J., Oostra, A.J., Koster, L.J.A., de Leeuw, D.M., Blom, P.W.M.
Publikováno v:
In Organic Electronics June 2013 14(6):1591-1596
Autor:
Wang, X., Wilson, P.R., Leite, R.B., Chen, G., Freitas, H., Asadi, K., Smits, E.C.P., Katsouras, I., Rocha, P.R.F.
Publikováno v:
Energy Technology
Generating electricity from low-frequency mechanical agitations produced by ocean waves, plants, or human motion is emerging as a key, environmentally friendly technology in combating harmful emissions caused by burning fossil fuels. The electric pul
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::7a58958a70ac0bcec660d1cfc4549aae
http://resolver.tudelft.nl/uuid:cf7f67e4-f22d-4022-8840-1f7bcdf60dd2
http://resolver.tudelft.nl/uuid:cf7f67e4-f22d-4022-8840-1f7bcdf60dd2
Autor:
Illiberi, A., Katsouras, I., Gazibegovic, S., Cobb,B., Nekovic, E., Boekel, W. van, Frijters, C., Maas, J., Roozeboom, F., Creyghton, Y., Gelinck, G.
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 4, 36
In this manuscript, the authors investigate the growth of indium zinc oxide, indium zinc oxide (InZnO, IZO) as a channel material for thin-film transistors. IZO is grown at atmospheric pressure and a high deposition rate using spatial atomic layer de
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::022a6a5c893770d8afe64d5c64cce345
http://resolver.tudelft.nl/uuid:91dc1e3b-763b-459e-bcf3-b3620b8ff06d
http://resolver.tudelft.nl/uuid:91dc1e3b-763b-459e-bcf3-b3620b8ff06d
Autor:
Kronemeijer, A.J., Katsouras, I., Poodt, P., Akkerman, H.B., Breemen, A.J.J.M. van, Gelinck, G.H.
Publikováno v:
AM-FPD 2018-25th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings, 3 July 2018 through 6 July 2018
We present recent developments on flexible a-IGZO TFT technology scaling in terms of TFT channel length and operating voltage, as well as manufacturing cost optimization with a focus on R2R processing compatibility. We present progress on the relevan
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::de4880cf62765172f5df6c5e486c173d
http://resolver.tudelft.nl/uuid:7a624b8a-a6c3-4d5b-8c89-af55af1253e4
http://resolver.tudelft.nl/uuid:7a624b8a-a6c3-4d5b-8c89-af55af1253e4
Autor:
Akkerman, H.B., Braccini, S., Manzano, L. Gallego, Heracleous, N., Katsouras, I., Leidner, J., Oliveira, A.C. Maia, Murtas, F., Peeters, B., Silari, M., van Breemen, A.J.J.M.
Publikováno v:
In Physica Medica December 2021 92 Supplement:S124-S125
Poly(vinylidene fluoride) (PVDF) has long been regarded as an ideal piezoelectric ‘plastic’ because it exhibits a large piezoelectric response and a high thermal stability. However, the realization of piezoelectric PVDF elements has proven to be
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______1032::4da27bd5f7c1074e68d8eebf843f093d
http://hdl.handle.net/10044/1/50755
http://hdl.handle.net/10044/1/50755
Publikováno v:
Applied Physics Letters, 23, 108
A homogeneous ferroelectric single crystal exhibits only two remanent polarization states that are stable over time, whereas intermediate, or unsaturated, polarization states are thermodynamically instable. Commonly used ferroelectric materials howev
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::83f44e8dc44583b48fce7b74f72cc818
http://resolver.tudelft.nl/uuid:543abdbb-a6bb-4108-a824-b85ead1a7a64
http://resolver.tudelft.nl/uuid:543abdbb-a6bb-4108-a824-b85ead1a7a64
Autor:
Lenz, T., Zhao, D., Richardson, G., Katsouras, I., Asadi, K., Glaßer, G., Zimmerman, S.T., Stingeling, N., Roelofs, C., Kemerink, M., Blom, P.W.M., de Leeuw, D.M.
Publikováno v:
Physica Status Solidi A, 10, 212, 2124-2132
Physica Status Solidi A : Applications and material science, 212(10), 2124-2132. Wiley-VCH Verlag
Physica Status Solidi A : Applications and material science, 212(10), 2124-2132. Wiley-VCH Verlag
Ferroelectric nanostructures offer a promising route for novel integrated electronic devices such as non-volatile memories. Here we present a facile fabrication route for ferroelectric capacitors comprising a linear array of the ferroelectric random
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::3f5a25b7bb551c18b28ed221e5568fcf
http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-122535
http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-122535
Publikováno v:
Scientific Reports, 5
The on/off current ratio in organic ferroelectric field-effect transistors (FeFETs) is largely determined by the position of the threshold voltage, the value of which can show large device-to-device variations. Here we show that by employing a dual-g
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::71811d6dc84bdeb7b6321fbd5a171029
http://resolver.tudelft.nl/uuid:ceabeaa7-7f73-49aa-a318-c2965454ed53
http://resolver.tudelft.nl/uuid:ceabeaa7-7f73-49aa-a318-c2965454ed53
Autor:
Katsouras, I.
De elektrische eigenschappen van verschillende klassen van materialen zijn afhankelijk van de lengteschaal. Interessante verschijnselen optreden als een van de dimensies van de onderzochte systeem in de orde van enkele nanometers is. Het onderzoek na
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::9a01702593f5263c7645ba439f0c25bc
https://research.rug.nl/en/publications/0eef8237-d423-4ba2-b96d-419c58c59c0f
https://research.rug.nl/en/publications/0eef8237-d423-4ba2-b96d-419c58c59c0f