Zobrazeno 1 - 10
of 331
pro vyhledávání: '"Katsaros, G."'
Publikováno v:
IEEE SPAWC 2024
Upcoming physical layer (PHY) processing solutions, leveraging multiple-input multiple-output (MIMO) advances, are expected to support broad transmission bandwidths and the concurrent transmission of multiple information streams. However, the inheren
Externí odkaz:
http://arxiv.org/abs/2408.13128
Autor:
Severin, B., Lennon, D. T., Camenzind, L. C., Vigneau, F., Fedele, F., Jirovec, D., Ballabio, A., Chrastina, D., Isella, G., de Kruijf, M., Carballido, M. J., Svab, S., Kuhlmann, A. V., Braakman, F. R., Geyer, S., Froning, F. N. M., Moon, H., Osborne, M. A., Sejdinovic, D., Katsaros, G., Zumbühl, D. M., Briggs, G. A. D., Ares, N.
The potential of Si and SiGe-based devices for the scaling of quantum circuits is tainted by device variability. Each device needs to be tuned to operation conditions. We give a key step towards tackling this variability with an algorithm that, witho
Externí odkaz:
http://arxiv.org/abs/2107.12975
Publikováno v:
In Food Chemistry 1 September 2023 419
Autor:
Katsaros, G., Kukučka, J., Vukušić, L., Watzinger, H., Gao, F., Wang, T., Zhang, J. J., Held, K.
Using inelastic cotunneling spectroscopy, we observe a 55{\mu}eV zero field splitting in the spin triplet manifold of Ge hut wire quantum dots. The degeneracy of the heavy hole triplet state is lifted since the interplay of strong spin orbit coupling
Externí odkaz:
http://arxiv.org/abs/1911.06418
Akademický článek
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Autor:
Ares, N., Katsaros, G., Golovach, V. N., Zhang, J. J., Prager, A., Glazman, L. I., Schmidt, O. G., De Franceschi, S.
Publikováno v:
Appl. Phys. Lett. 103, 263113 (2013)
We report on hole g-factor measurements in three terminal SiGe self-assembled quantum dot devices with a top gate electrode positioned very close to the nanostructure. Measurements of both the perpendicular as well as the parallel g-factor reveal sig
Externí odkaz:
http://arxiv.org/abs/1307.7196
Autor:
Ares, N., Golovach, V. N., Katsaros, G., Stoffel, M., Fournel, F., Glazman, L. I., Schmidt, O. G., De Franceschi, S.
Publikováno v:
Phys. Rev. Lett. 110, 046602 (2013)
Electrically tunable g-factors in quantum dots are highly desirable for applications in quantum computing and spintronics. We report giant modulation of the hole g-factor in a SiGe nanocrystal when an electric field is applied to the nanocrystal alon
Externí odkaz:
http://arxiv.org/abs/1208.0476
Autor:
Katsaros, G., Golovach, V. N., Spathis, P., Ares, N., Stoffel, M., Fournel, F., Schmidt, O. G., Glazman, L. I., De Franceschi, S.
Publikováno v:
Phys. Rev. Lett. 107, 246601 (2011)
Spin-selective tunneling of holes in SiGe nanocrystals contacted by normal-metal leads is reported. The spin selectivity arises from an interplay of the orbital effect of the magnetic field with the strong spin-orbit interaction present in the valenc
Externí odkaz:
http://arxiv.org/abs/1107.3919
Autor:
Songmuang, R., Katsaros, G., Monroy, E., Spathis, P., Bourgeral, C., Mongillo, M., De Franceschi, S.
We investigate electronic transport in n-i-n GaN nanowires with and without AlN double barriers. The nanowires are grown by catalyst-free, plasma-assisted molecular beam epitaxy enabling abrupt GaN/AlN interfaces as well as longitudinal n-type doping
Externí odkaz:
http://arxiv.org/abs/1005.3637
Autor:
Katsaros, G., Spathis, P., Stoffel, M., Fournel, F., Mongillo, M., Bouchiat, V., Lefloch, F., Rastelli, A., Schmidt, O. G., De Franceschi, S.
The epitaxial growth of germanium on silicon leads to the self-assembly of SiGe nanocrystals via a process that allows the size, composition and position of the nanocrystals to be controlled. This level of control, combined with an inherent compatibi
Externí odkaz:
http://arxiv.org/abs/1005.1816