Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Katrin Hilbrich"'
Autor:
Martin Guttmann, Neysha Lobo-Ploch, Heiko Gundlach, Frank Mehnke, Luca Sulmoni, Tim Wernicke, Hyun Kyong Cho, Katrin Hilbrich, Alexander Külberg, Matthias Friedler, Thomas Filler, Indira Käpplinger, Dennis Mitrenga, Christian Maier, Olaf Brodersen, Thomas Ortlepp, Ulrike Woggon, Sven Einfeldt, Michael Kneissl
AlGaN-based far ultraviolet-C (UVC) light emitting diodes (LEDs) with a peak emission wavelength below 240 nm typically show a long-wavelength tail at >240 nm that is detrimental to the use of the devices for skin-friendly antisepsis. We present the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6ec0272800bf1193079492ae7a831e3b
https://depositonce.tu-berlin.de/handle/11303/16519
https://depositonce.tu-berlin.de/handle/11303/16519
Autor:
Shaojun Wu, Martin Guttmann, Neysha Lobo-Ploch, Frank Gindele, Norman Susilo, Arne Knauer, Tim Kolbe, Jens Raß, Sylvia Hagedorn, Hyun Kyong Cho, Katrin Hilbrich, Martin Feneberg, Rüdiger Goldhahn, Sven Einfeldt, Tim Wernicke, Markus Weyers, Michael Kneissl
Publikováno v:
Semiconductor Science and Technology. 37:065019
Increase of light extraction efficiency (LEE) and total output power of UV light emitting diodes (LEDs) emitting at 265 and 310 nm, respectively, after encapsulation with a UV-transparent silicone are studied. Raytracing simulations suggest that a pr
Autor:
Frank Mehnke, Sven Einfeldt, Tim Wernicke, Luca Sulmoni, Neysha Lobo-Ploch, Martin Guttmann, Johannes Glaab, Katrin Hilbrich, Hyun Kyong Cho, Michael Kneissl
Publikováno v:
Applied Physics Letters. 117:111102
Deep UV-LEDs (DUV-LEDs) emitting at 233 nm with an emission power of (1.9 ± 0.3) mW and an external quantum efficiency of (0.36 ± 0.07) % at 100 mA are presented. The entire DUV-LED process chain was optimized including the reduction of the disloca
Autor:
Johannes Glaab, Sven Einfeldt, Jan Ruschel, Sylvia Hagedorn, Arne Knauer, Christoph Stoelmacker, Michael Kneissl, Ina Ostermay, Katrin Hilbrich, Tim Kolbe, O. Krueger, Anna Andrle, Deepak Prasai, Maria Reiner, A. Thies, S. Knigge, Markus Weyers, Jens Rass, Neysha Lobo Ploch, Hyun Kyong Cho
Publikováno v:
Gallium Nitride Materials and Devices XIII.
The development of efficient (In)AlGaN light emitting diodes (LEDs) in the ultraviolet B (UVB) spectral region (280nm-320nm) is essential due to their vast commercial potential. UVB LEDs are expected to not only replace traditional mercury lamps in a