Zobrazeno 1 - 10
of 48
pro vyhledávání: '"Katkov, V. L."'
Autor:
Katkov, V. L., Osipov, V. A.
We have studied the influence of the transverse size of a magnetic tunnel nanojunction on the magnitude of the magnetoresistance. During modeling, the size of the right contact was fixed, while the size of the left one gradually changed until they co
Externí odkaz:
http://arxiv.org/abs/2012.12569
Autor:
Katkov, V. L.1 (AUTHOR) katkov@theor.jinr.ru, Osipov, V. A.1 (AUTHOR) osipov@theor.jinr.ru
Publikováno v:
JETP Letters. Nov2023, Vol. 118 Issue 10, p754-758. 5p.
Publikováno v:
EPL 118, (2017) 27003
The influence of edge vacancies on the working ability of the planar graphene tunnel field-effect transistor (TFET) is studied at various concentrations and distributions (normal, uniform, periodic) of defects. All calculations are performed by using
Externí odkaz:
http://arxiv.org/abs/1707.00933
Publikováno v:
Low Temp Phys (2014) 176: 64
We compare the heat release data of organic glasses with that of amorphous and glass like crystalline solids. Anomalous behavior was found in all these materials, which disagrees with the standard tunneling model. We can explain the most of the exper
Externí odkaz:
http://arxiv.org/abs/1610.03981
Publikováno v:
PhysRevB.82.174204 (2014)
The thermal conductivity, heat capacity and heat release of NbTi, NbTi-H and NbTi-D were measured at low temperatures. All three systems reveal low temperature anomalies typical for structural glasses. It is shown that above a concentration of 2\% H
Externí odkaz:
http://arxiv.org/abs/1610.03974
Publikováno v:
Phys. Rev. B 94, 144107 (2016)
The long-time thermal relaxation of (TMTTF)$_2$Br, Sr$_{14}$Cu$_{24}$O$_{41}$ and Sr$_2$Ca$_{12}$Cu$_{24}$O$_{41}$ single crystals at temperatures below 1 K and magnetic field up to 10 T is investigated. The data allow us to determine the relaxation
Externí odkaz:
http://arxiv.org/abs/1610.03683
Publikováno v:
JETP 104, (2016) 842
The effect of vacancies on the robustness of zero-energy edge electronic states in zigzag-type graphene layer is studied at different concentrations and distributions of defects. All calculations are performed by using the Green's function method and
Externí odkaz:
http://arxiv.org/abs/1608.04523
Autor:
Katkov, V. L., Osipov, V. A.
Publikováno v:
Appl. Phys. Lett, 104, 053102 (2014)
We propose a concept for a graphene tunnel field-effect transistor. The main idea is based on the use of two graphene electrodes with zigzag termination divided by a narrow gap under the influence of the common gate. Our analysis shows that such devi
Externí odkaz:
http://arxiv.org/abs/1310.6951
Autor:
Katkov, V. L., Osipov, V. A.
Publikováno v:
Pis'ma v ZhETF, vol. 90, issue 4, page 304 (2009)
We emphasize the importance of experiments with voltage dependent field emission energy distribution analysis in carbon nanosheets. Our analysis shows the crucial influence of the band structure on the energy distribution of field emitted electrons i
Externí odkaz:
http://arxiv.org/abs/0905.1000
Autor:
Katkov, V. L., Osipov, V. A.
Publikováno v:
J. Phys.:Condens.Matter, vol. 20, p. 035204 (2008)
The field emission of crystalline AAA graphite is studied within a simple analytical approach with account of the exact dispersion relation near the Fermi level. The emission current is calculated for two crystal orientations with respect to the appl
Externí odkaz:
http://arxiv.org/abs/0711.3549