Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Katja Waschneck"'
Autor:
Michael Waltl, Yoanlys Hernandez, Christian Schleich, Katja Waschneck, Bernhard Stampfer, Hans Reisinger, Tibor Grasser
Publikováno v:
Materials Science Forum. 1062:688-695
For the analysis of the characteristics and behavior of circuits prior to fabrication and to improve circuit performance, simulations using Spice tools are typically performed. Such tools rely on static compact models describing the behavior of the i
Autor:
Maximilian W. Feil, Katja Waschneck, Hans Reisinger, Judith Berens, Thomas Aichinger, Paul Salmen, Gerald Rescher, Wolfgang Gustin, Tibor Grasser
Publikováno v:
2023 IEEE International Reliability Physics Symposium (IRPS).
Autor:
Maximilian W. Feil, Hans Reisinger, Dominic Waldhoer, Michael Waltl, Tibor Grasser, Katja Waschneck, Christian Schleich
Publikováno v:
IEEE Transactions on Electron Devices. 68:4016-4021
Silicon carbide (SiC) MOSFETs still exhibit higher drifts of the threshold voltage than comparable silicon devices due to charge trapping, especially regarding small time scales. Understanding this behavior and the consequences in application relevan
Autor:
Gerald Rescher, Katja Waschneck, Hans Reisinger, Thomas Aichinger, Maximilian W. Feil, P. Salmen
Publikováno v:
IRPS
We present a new, pulsed-gate stress test approach to determine electrical parameter stability of SiC MOSFETs over a lifetime. We demonstrate that the results of our test procedure reflect most realistically worst-case, end-of-life parameter drifts t
Autor:
Katja Waschneck, Peter Rotter, Christian Schlunder, Franz Ungar, Hans Reisinger, Georg Georgakos, Susanne Lachenmann
Publikováno v:
IRPS
For modern semiconductor product design, reliability aspects have to be considered not only for technology process development but inevitable also during circuit design phase. Electronic design automation tools (EDA) have to support circuit designers