Zobrazeno 1 - 10
of 145
pro vyhledávání: '"Katja Tonisch"'
Publikováno v:
Sensors, Vol 22, Iss 13, p 4958 (2022)
In recent investigations of magnetoelectric sensors based on microelectromechanical cantilevers made of TiN/AlN/Ni, a complex eigenfrequency behavior arising from the anisotropic ΔE effect was demonstrated. Within this work, a FEM simulation model b
Externí odkaz:
https://doaj.org/article/4bc615724fea4ad09ea01f38626e039d
Publikováno v:
Sensors, Vol 20, Iss 4, p 1001 (2020)
Magnetoelectric sensors provide the ability to measure magnetic fields down to the pico tesla range and are currently the subject of intense research. Such sensors usually combine a piezoelectric and a magnetostrictive material, so that magnetically
Externí odkaz:
https://doaj.org/article/3bacd68b9afb434d83ee27e7f6fb4630
Publikováno v:
Key Engineering Materials. 865:13-18
Scandium aluminum nitride (ScxAl1-xN) is a promising material for sensor applications as it exhibits enhanced piezoelectric properties compared to pristine AlN while maintaining other advantageous properties like high thermal stability. Magnetoelectr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::33575deef4987dc1089a0b2cc561fab3
https://doi.org/10.4028/www.scientific.net/kem.865.13
https://doi.org/10.4028/www.scientific.net/kem.865.13
Autor:
Bernd Haehnlein, Maria Kellner, Maximilian Krey, Alireza Nikpourian, Joerg Pezoldt, Steffen Michael, Hannes Toepfer, Stefan Krischok, Katja Tonisch
Publikováno v:
SSRN Electronic Journal.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ff28dafbf85b8ff40713ec89fefbd37e
https://doi.org/10.2139/ssrn.4112978
https://doi.org/10.2139/ssrn.4112978
Publikováno v:
physica status solidi (a). :2200839
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d336ab53d90e0e972d6b646a2ae1f2f9
https://doi.org/10.1002/pssa.202200839
https://doi.org/10.1002/pssa.202200839
Autor:
Bernd Hähnlein, Maria Kellner, Maximilian Krey, Alireza Nikpourian, Jörg Pezoldt, Steffen Michael, Hannes Töpfer, Stefan Krischok, Katja Tonisch
Publikováno v:
Sensors and Actuators A: Physical. 345:113784
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0630789d1e0428b6e1a6b4a1ce28ca70
https://doi.org/10.1016/j.sna.2022.113784
https://doi.org/10.1016/j.sna.2022.113784
Publikováno v:
Sensors (Basel, Switzerland)
Magnetoelectric sensors provide the ability to measure magnetic fields down to the pico tesla range and are currently the subject of intense research. Such sensors usually combine a piezoelectric and a magnetostrictive material, so that magnetically
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::42733820fecc0736bda77f593040e80d
https://pubmed.ncbi.nlm.nih.gov/32069884
https://pubmed.ncbi.nlm.nih.gov/32069884
Autor:
Stefan Krischok, A. Delan, D. Glos, Martin Hoffmann, S. Strehle, Heike Bartsch, H. Bartzsch, R. Petrich, Stefan Barth, K. Jaekel, Katja Tonisch, Jens Muller
Publikováno v:
2019 22nd European Microelectronics and Packaging Conference & Exhibition (EMPC).
$Sc_{X}Al_{-X}N$ is a promising material to expand the application range of nitride materials, since scandium increases the piezoelectric constants while retaining the crystalline wurtzite structure. In this work, stationary reactive pulse magnetron
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::159ad8e4a384980f7d1ad4b19ee43d7f
https://doi.org/10.23919/empc44848.2019.8951824
https://doi.org/10.23919/empc44848.2019.8951824
Autor:
Katja Tonisch, Bernd Hähnlein, S. Michael, Jörg Pezoldt, Peter Schaaf, Rolf Grieseler, Gernot Ecke
Publikováno v:
physica status solidi c. 11:239-243
AlxGa1-xN solid solutions were heteroepitaxially grown on 3C-SiC(111)/Si(111) pseudo substrates fabricated by low pressure chemical vapour deposition. Free standing doubly-clamped resonator bars and cantilevers were fabricated from these AlxGa1–xN
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e4edf4814a02eee455b1d4c752633662
https://doi.org/10.1002/pssc.201300153
https://doi.org/10.1002/pssc.201300153
Publikováno v:
physica status solidi c. 11:280-283
AlGaN/GaN heterostructures were grown on sapphire and alternatively on silicon substrates covered with a thin SiC layer by MOCVD. The side gated transistors were fabricated using electron beam lithography. The conductivity of the drain-source branch
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8c3a5527d5e5350fcceaf2e2e9eba008
https://doi.org/10.1002/pssc.201300298
https://doi.org/10.1002/pssc.201300298