Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Katja Keil"'
Publikováno v:
Microelectronic Engineering. 86:2408-2411
For feature sizes smaller than 100nm, proximity effect correction gains more importance in electron beam lithography. Several methods have been proposed for the determination of the proximity parameters, most of them being extensive and time-consumin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2cc45a0fa4a5e105e57868c7ffe691a9
https://doi.org/10.1016/j.mee.2009.05.002
https://doi.org/10.1016/j.mee.2009.05.002
Autor:
Monika Boettcher, Lutz Bettin, Holger Sailer, Mathias Irmscher, Tarek Lutz, Johannes Kretz, Karl-Heinz Kliem, Kang-Hoon Choi, Katja Keil, Christoph Hohle, Peter Hahmann, Bernd Schnabel
Publikováno v:
Microelectronic Engineering. 85:778-781
Electron beam direct write (EBDW) provides high resolution for device and technology development. A new variable shaped beam system with improved electron optics was introduced, which features the capability for the 32nm node. Because of the limited
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fad20cf8eecbf6c9343945d816041863
https://doi.org/10.1016/j.mee.2008.01.042
https://doi.org/10.1016/j.mee.2008.01.042
Autor:
Katja Keil, Martin Freitag, Philipp Jaschinsky, Christoph Hohle, Manuela Gutsch, Kang-Hoon Choi
Publikováno v:
SPIE Proceedings.
For shortening the writing time, especially in shaped Electron Beam Direct Writing (EBDW), it is crucial to reduce the number of shapes and the coverage of layout for exposure. The determination of conventional or reversed image printing according to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::596c377c27129f2ca135721d19483d66
https://doi.org/10.1117/12.846514
https://doi.org/10.1117/12.846514
Autor:
Philipp Jaschinsky, Marc Hauptmann, Katja Keil, Kang-Hoon Choi, Manuela Gutsch, Christoph Hohle, Martin Freitag
Publikováno v:
SPIE Proceedings.
In electron beam lithography, the electron scattering and the corresponding proximity effect highly influence the feature resolution. Especially for sub-100 nm features a compensation for this effect is needed. There are several methods of determinat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e39d663cbdab73b6d5184ca7243ebbfc
https://doi.org/10.1117/12.864315
https://doi.org/10.1117/12.864315
Autor:
Christoph Hohle, Arie Jeffrey Den Boef, Marc Hauptmann, Philipp Jaschinsky, Valeriano Ferreras Paz, Uwe Seifert, Johannes Kretz, Manfred Mört, Kang-Hoon Choi, Katja Keil, Laszlo Szikszai, F. Thrum
Publikováno v:
Alternative Lithographic Technologies.
Electron beam direct write (EBDW) can be utilized for developing metrology methods for future technology nodes. Due to its advantage of high resolution and flexibility combined with suitable throughput capability, variable-shaped E-Beam lithography i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::87ab78c6b2d2bbc1b8ef6ad2cd45cf71
https://doi.org/10.1117/12.814181
https://doi.org/10.1117/12.814181
Autor:
Katja Keil, Johannes Kretz, R. Zimmermann, M. Tesauro, K.-H. Choi, F. Thrum, Christoph Hohle, Philipp Jaschinsky, R. Schneider
Publikováno v:
25th European Mask and Lithography Conference.
Because of mask cost reduction, electron beam direct write (EBDW) is implemented for special applications such as rapid prototyping or small volume production in semiconductor industry. One of the most promising applications for EBDW is design verifi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b9a918f99ac47d4c7df85cdeb85fe3b1
https://doi.org/10.1117/12.835206
https://doi.org/10.1117/12.835206
Autor:
Katja Keil, Johannes Kretz, Marc Hauptmann, Laurent Pain, Johann W. Bartha, Christophe Constancias
The resolution limit in e-beam lithography is dependent on the resist process, the proximity effect, and the e-beam writer itself. However, it is difficult to distinguish these contributions just by comparing critical dimensions (CDs) of isolated and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6602bd74c532846e2e3f0452fdd52bfa
https://publica.fraunhofer.de/handle/publica/220487
https://publica.fraunhofer.de/handle/publica/220487
Publikováno v:
SPIE Proceedings.
The resolution of a variable shaped beam writer is typically given for the standard geometries like isolated line, isolated space, and dense (1:1) line/space pattern. It is related to the imaging power of both the tool itself as well as the resist pr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::574e6031376d8bf41c0a66795408cbee
https://doi.org/10.1117/12.798585
https://doi.org/10.1117/12.798585
Autor:
Johannes Kretz, Roy Zimmermann, M. Tesauro, Kang-Hoon Choi, F. Thrum, Katja Keil, Christoph Hohle, Rok Dittrich, Matthias Goldbach, Thomas Marschner
Publikováno v:
SPIE Proceedings.
Line edge roughness (LER) and line width roughness (LWR) have raised questions and concerns as current lithography techniques reduce critical dimensions (CD) below 50 nm. There are few applications of controlled variation of LER and LWR, even among t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f678018a87451248cd4fd414b143db3d
https://doi.org/10.1117/12.772649
https://doi.org/10.1117/12.772649
Autor:
M. Richter, M. Kindler, M. Lapidot, Tarek Lutz, D. Zemach, Katja Keil, Christoph Hohle, Johannes Kretz, C. Arndt
Publikováno v:
SPIE Proceedings.
For Electron Beam Direct Write (EBDW) a systematic investigation of defect density using a Negevtech 3100 darkfield inspection system was performed. A special defect learning pattern for memory applications with coverage of 50% was designed and print
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9e1680badcf568f615f951e2f3afddcb
https://doi.org/10.1117/12.712078
https://doi.org/10.1117/12.712078