Zobrazeno 1 - 10
of 15
pro vyhledávání: '"Katie Lutker"'
Autor:
Seiji Nagahara, Arnaud Dauendorffer, Xiang Liu, Tomoya Onitsuka, Hisashi Genjima, Noriaki Nagamine, Yuhei Kuwahara, Yuya Kamei, Shinichiro Kawakami, Makoto Muramatsu, Satoru Shimura, Kathleen Nafus, Noriaki Oikawa, Yannick Feurprier, Marc Demand, Sophie Thibaut, Alexandra Krawicz, Steven Grzeskowiak, Katie Lutker-Lee, Eric Liu, Christopher Catano, Joshua D. LaRose, Jeffrery C. Shearer, Lior Huli, Philippe Foubert, Danilo De Simone
Publikováno v:
International Conference on Extreme Ultraviolet Lithography 2022.
Autor:
Angélique Raley, Lior Huli, Steven Grzeskowiak, Katie Lutker-Lee, Alexandra Krawicz, Yannick Feurprier, Eric Liu, Kanzo Kato, Kathleen Nafus, Arnaud Dauendorffer, Nayoung Bae, Josh LaRose, Andrew Metz, Dave Hetzer, Masanobu Honda, Tetsuya Nishizuka, Akiteru Ko, Soichiro Okada, Yasuyuki Ido, Tomoya Onitsuka, Shinichiro Kawakami, Seiji Fujimoto, Satoru Shimura, Cong Que Dinh, Makoto Muramatsu, Peter Biolsi, Hiromasa Mochiki, Seiji Nagahara
Publikováno v:
Advanced Etch Technology and Process Integration for Nanopatterning XI.
Autor:
Bin Chen, Zongqiang Feng, Nobumichi Tamura, Jianing Xu, Linli Zhu, Xiaoling Zhou, Hengzhong Zhang, Tianlin Huang, Jinyuan Yan, Hongwei Sheng, Yanju Wang, Hongliang Dong, Darcy A. Hughes, Yanming Ma, Lowell Miyagi, Martin Kunz, Quan Li, Xiaoxu Huang, Katie Lutker
Publikováno v:
Nature. 579:67-72
The Hall-Petch relationship, according to which the strength of a metal increases as the grain size decreases, has been reported to break down at a critical grain size of around 10 to 15 nanometres1,2. As the grain size decreases beyond this point, t
Autor:
Qiaowei Lou, Katie Lutker-Lee, Eric Liu, Gregory Denbeaux, Angelique Raley, Kai-hung Yu, Peter Biolsi, Ya-Ming Chen
Publikováno v:
Journal of Micro/Nanopatterning, Materials, and Metrology. 20
Extreme ultraviolet lithography (EUVL) has been adopted into high volume production for advanced logic device manufacturing. Due to the continuous size scaling requirement for interconnect fabrication, EUVL with self-aligned double patterning (SADP)
Publikováno v:
Journal of Vacuum Science & Technology B. 40:032204
Extreme ultraviolet (EUV) lithography has overcome significant challenges to become an essential enabler to the logic scaling roadmap. However, it remains limited by stochastically driven defects, such as line breaks and line bridges for aggressive p
Publikováno v:
Advanced Etch Technology and Process Integration for Nanopatterning X.
Extreme ultraviolet lithography (EUVL) has been adopted into high volume production for advanced logic device manufacturing. Due to the continuous size scaling requirement for interconnect fabrication, EUVL with self-aligned double patterning (SADP)
Publikováno v:
Advanced Etch Technology and Process Integration for Nanopatterning X.
As EUV direct patterning begins to hit its resolution limit, the need for EUV self-aligned double patterning (SADP) has arisen in order to reach sub-30 nm pitch. Currently, EUV resists suffer from several shortcomings, both in terms of roughness and
Autor:
Joe Lee, Subhadeep Kal, Qiaowei Lou, Aelan Mosden, Brendan O’Brien, Naoki Shibata, Eric Liu, Luciana Meli, Chia-Yun Hsieh, Jake Kaminsky, Katie Lutker-Lee, Christopher Cole, Chi-Chun Liu, Saumya Sharma, Akiteru Ko, Angelique Raley, Jennifer Church, Lior Huli, Cody Murray, Karen Petrillo, Shan Hu, Dave Hetzer, Henan Zhang, Ashim Dutta
Publikováno v:
Extreme Ultraviolet (EUV) Lithography XI.
As future patterning processes reach the limit of lithographic printability, continuous innovation in mandrel trim or shrink strategies are required to reach sub-20 nm line-space patterning. Growing concerns of lithography defectivity, mask selectivi
Autor:
Xiaoling, Zhou, Zongqiang, Feng, Linli, Zhu, Jianing, Xu, Lowell, Miyagi, Hongliang, Dong, Hongwei, Sheng, Yanju, Wang, Quan, Li, Yanming, Ma, Hengzhong, Zhang, Jinyuan, Yan, Nobumichi, Tamura, Martin, Kunz, Katie, Lutker, Tianlin, Huang, Darcy A, Hughes, Xiaoxu, Huang, Bin, Chen
Publikováno v:
Nature. 579(7797)
The Hall-Petch relationship, according to which the strength of a metal increases as the grain size decreases, has been reported to break down at a critical grain size of around 10 to 15 nanometres
Publikováno v:
Journal of Vacuum Science & Technology A. 37:011001
For logic nodes of 7 nm and beyond, back-end-of-line (BEOL) trench patterns have a critical pitch of less than 40 nm, directly affecting the plasma etch process window of the dual damascene etch process. Feature size dependent etch depth (reactive io