Zobrazeno 1 - 10
of 42
pro vyhledávání: '"Kati, Kühnel"'
Autor:
Tarek Ali, Kati Kühnel, Ricardo Olivo, David Lehninger, Franz Müller, Maximilian Lederer, Matthias Rudolph, Sebastian Oehler, Konstantin Mertens, Raik Hoffmann, Katrin Zimmermann, Philipp Schramm, Joachim Metzger, Robert Binder, Malte Czernohorsky, Thomas Kämpfe, Konrad Seidel, Johannes Müller, Jan Van Houdt, Lukas M. Eng
Publikováno v:
Electronic Materials, Vol 2, Iss 3, Pp 344-369 (2021)
A multi-level cell (MLC) operation as a 1–3 bit/cell of the FeFET emerging memory is reported by utilizing optimized Si doped hafnium oxide (HSO) and hafnium zirconium oxide (HZO) based on ferroelectric laminates. An alumina interlayer was used to
Externí odkaz:
https://doaj.org/article/6a0badee24cb4cb1b98d56cb4bc03298
Autor:
Clemens Mart, Thomas Kämpfe, Kati Kühnel, Malte Czernohorsky, Sabine Kolodinski, Maciej Wiatr, Wenke Weinreich, Lukas M. Eng
Publikováno v:
APL Materials, Vol 9, Iss 5, Pp 051120-051120-7 (2021)
The hafnium oxide material class is characterized by the coexistence of several polymorphs between which phase transitions are induced by means of composition and external electric fields. Pyroelectric materials, which convert heat into electrical en
Externí odkaz:
https://doaj.org/article/d96fc2b8bc62491a8479e4bd178f932f
Autor:
Konstantinos Efstathios, Falidas, Kati, Kühnel, Matthias, Rudolph, Maximilian B, Everding, Malte, Czernohorsky, Johannes, Heitmann
Publikováno v:
Materials (Basel, Switzerland). 15(23)
Embedded three-dimensional (3-D) metal-insulator-metal (MIM) decoupling capacitors with high-κ dielectric films of high capacitance and long-life time are increasingly needed on integrated chips. Towards achieving better electrical performance, ther
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::4fea4b35d772b328532894fe7c60eb9a
https://pubmed.ncbi.nlm.nih.gov/36499822
https://pubmed.ncbi.nlm.nih.gov/36499822
Publikováno v:
ACS Applied Materials & Interfaces. 12:39252-39260
An in-depth understanding of lithium (Li) diffusion barriers is a crucial factor for enabling Li-ion-based devices such as three-dimensional (3D) thin-film batteries and synaptic redox transistors integrated on silicon substrates. Diffusion of Li ion
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b94b2cb6ca1a0dafed6e2349e10ea9c7
https://doi.org/10.1021/acsami.0c10950
https://doi.org/10.1021/acsami.0c10950
Autor:
Lukas M. Eng, P. Steinke, Konrad Seidel, B. Patzold, Malte Czernohorsky, Maximilian Lederer, Tarek Ali, Robert Binder, David Lehninger, Ricardo Olivo, Matthias Rudolph, Johannes Müller, Joachim Metzger, Thomas Kampfe, Kati Kühnel, R. Hoffmann, F. Muller, C. Mart
Publikováno v:
IEEE Transactions on Electron Devices. 67:2793-2799
We report on the temperature-dependent operation of fluorite-structure-based ferroelectric FET (FeFET) emerging memory. A temperature range (− 40 °C to 40 °C) is used to explore the FeFET characteristic relation to operating temperature. The memo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6d703ee8f716e9ab26f03e5032129473
https://doi.org/10.1109/ted.2020.2996582
https://doi.org/10.1109/ted.2020.2996582
Autor:
Matthias Rudolph, Maximilian Lederer, C. Mart, Ricardo Olivo, Robert Binder, Lukas M. Eng, B. Patzold, P. Steinke, Konrad Seidel, R. Hoffmann, F. Muller, Kati Kühnel, Tarek Ali, Thomas Kampfe, Malte Czernohorsky, Johannes Müller, Joachim Metzger, David Lehninger
Publikováno v:
IEEE Transactions on Electron Devices. 67:2981-2987
We report on the high-temperature operation and reliability of the Si-doped hafnium oxide (HSO) ferroelectric FET (FeFET) emerging memory. In this study, we explore the role of high-temperature operation of the ferroelectric (FE) material on the FeFE
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::82d8a716546cac7c51c7197115461bf2
https://doi.org/10.1109/ted.2020.2995781
https://doi.org/10.1109/ted.2020.2995781
Autor:
Tarek Ali, David Lehninger, Maximilian Lederer, Songrui Li, Kati Kühnel, Clemens Mart, Konstantin Mertens, Raik Hoffmann, Ricardo Olivo, Jennifer Emara, Kati Biedermann, Joachim Metzger, Robert Binder, Malte Czernohorsky, Thomas Kämpfe, Johannes Müller, Konrad Seidel, Lukas M. Eng
The properties of hybrid ferroelectric (FE) and antiFE (AFE) films integrated in a single capacitor stack is reported. The stack lamination (4 × 5 nm) or (2 × 10 nm) using an Alumina (Al2O3) interlayer, material type (Si-doped HfO2 (HSO) and Zr dop
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5254b0ebe89530fb0022edebeece4c91
https://publica.fraunhofer.de/handle/publica/416453
https://publica.fraunhofer.de/handle/publica/416453
Autor:
Ayse Sünbül, David Lehninger, Raik Hoffmann, Ricardo Olivo, Aditya Prabhu, Fred Schöne, Kati Kühnel, Moritz Döllgast, Nora Haufe, Lisa Roy, Thomas Kämpfe, Konrad Seidel, Lukas M. Eng
Publikováno v:
Adv. Eng. Mater.2022, 2201124
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b8d2e79f93f11b1f2f51e4cb88c8ae5f
https://doi.org/10.1002/adem.202201124
https://doi.org/10.1002/adem.202201124
Autor:
Jan Van Houdt, Konstantin Mertens, Konrad Seidel, Maximilian Lederer, Robert Binder, R. Hoffmann, Philipp Schramm, Thomas Kämpfe, Franz Muller, K. Zimmermann, Tarek Ali, Matthias Rudolph, Ricardo Olivo, Lukas M. Eng, Johannes Müller, Kati Kühnel, Sebastian Oehler, David Lehninger, Malte Czernohorsky, Joachim Metzger
Publikováno v:
Electronic Materials
Volume 2
Issue 3
Pages 24-369
Electronic Materials, Vol 2, Iss 24, Pp 344-369 (2021)
Volume 2
Issue 3
Pages 24-369
Electronic Materials, Vol 2, Iss 24, Pp 344-369 (2021)
A multi-level cell (MLC) operation as a 1–3 bit/cell of the FeFET emerging memory is reported by utilizing optimized Si doped hafnium oxide (HSO) and hafnium zirconium oxide (HZO) based on ferroelectric laminates. An alumina interlayer was used to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c37b362b03036ec90c66bafc8421bba0
Autor:
Wenke Weinreich, Kati Kühnel, Maciej Wiatr, C. Mart, Thomas Kampfe, Sabine Kolodinski, Malte Czernohorsky
Publikováno v:
ACS Applied Electronic Materials. 1:2612-2618
We employ a modified atomic layer deposition process utilizing in-situ mixing of precursors to obtain doped hafnium oxide thin films with improved ferroelectric properties. The method is demonstrat...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fdc9e50701345fb1878197697e51440e
https://doi.org/10.1021/acsaelm.9b00591
https://doi.org/10.1021/acsaelm.9b00591