Zobrazeno 1 - 10
of 33
pro vyhledávání: '"Kathryn M. Kelchner"'
Autor:
Nicolas Marquez Peraca, Saswatee Banerjee, John Roberts, Kathryn M. Kelchner, Alexander Franke
Publikováno v:
2023 International Applied Computational Electromagnetics Society Symposium (ACES).
Autor:
Saulius Marcinkevicius, Kathryn M. Kelchner, Mounir Mensi, Steven P. DenBaars, Tomas K. Uzdavinys, James S. Speck, Shuji Nakamura, Ruslan Ivanov
Publikováno v:
ACS Photonics. 5:528-534
A multimode scanning near-field optical microscopy technique that allows the mapping of surface morphology, photoluminescence (PL) spectra in illumination and illumination-collection modes, and PL dynamics, all in one scan, has been developed along w
Publikováno v:
Chemistry of Materials. 29:6269-6278
We developed a novel process for the atomic layer deposition (ALD) of SiCxNy films using a Si2Cl6 and a CH3NH2 plasma. Under self-limiting growth conditions, this ALD process led to SiCxNy films with up to 9 atomic percent carbon with a conformality
Publikováno v:
Journal of Crystal Growth. 411:56-62
The performance of In x Ga 1− x N-based m -plane LEDs and laser diodes grown by metalorganic chemical vapor deposition on bulk GaN substrates is currently limited by lower indium uptake and inhomogeneous linewidth broadening in the blue spectrum co
Autor:
Saulius Marcinkevicius, Kathryn M. Kelchner, Steven P. DenBaars, James S. Speck, Shuji Nakamura
Publikováno v:
physica status solidi c. 11:690-693
Scanning near-field and time-resolved photoluminescence spectroscopy have been applied to characterize single m-plane InGaN QW structures. The PL spectra were found to be formed by emission from the extended and the localized states. Lateral dimensio
Autor:
Shuji Nakamura, Kenji Fujito, Leah Y. Kuritzky, James S. Speck, Kathryn M. Kelchner, Steven P. DenBaars
Publikováno v:
Journal of Crystal Growth. 382:80-86
InGaN single quantum wells (SQWs) grown on m -plane bulk GaN substrates show significant differences in peak emission wavelength when grown on substrates oriented nominally on-axis compared to substrates with small intentional misorientations (miscut
Autor:
James S. Speck, Daniel A. Haeger, Robert M. Farrell, Steven P. DenBaars, Kathryn M. Kelchner, Michael Iza, Shuji Nakamura, Kenji Fujito, X. Chen, Sarah L. Keller, Arpan Chakraborty, Asako Hirai
Publikováno v:
Journal of Crystal Growth. 313:1-7
The properties of Si-doped GaN (GaN:Si) thin films and InGaN/GaN light-emitting diodes (LEDs) grown by metalorganic chemical vapor deposition on free-standing {1 0 1 0} m -plane GaN substrates were investigated with regard to carrier gas and substrat
Autor:
St. P. DenBaars, Daniel A. Cohen, Kathryn M. Kelchner, Kenji Fujito, Apran Chakraborty, Robert M. Farrell, Matthew T. Hardy, James S. Speck, Daniel A. Haeger, Shuji Nakamura, Po S. Hsu
Publikováno v:
physica status solidi c. 8:2226-2228
The effect of thick n-type Al0.12Ga0.88N cleave assistance layers (CALs) on the morphology of c -plane cleaved facets was investigated for m -plane InGaN/GaN laser diode (LD) ridge waveguide structures. Five LD structures with AlGaN CAL thicknesses r
Autor:
Po Shan Hsu, Hiroaki Ohta, Anurag Tyagi, James S. Speck, Shuji Nakamura, Kenji Fujito, Kathryn M. Kelchner, Steven P. DenBaars, Erin C. Young, Daniel A. Haeger, Junichi Sonoda, Robert M. Farrell, Alexey E. Romanov
Publikováno v:
physica status solidi c. 8:2390-2392
We demonstrate the first blue AlInGaN-based laser diodes (LDs) grown on semipolar (33) free-standing GaN substrates. Etched facet ridge waveguide LDs were fabricated and tested under pulsed operation. Lasing was achieved at 477.5 nm with a threshold
Autor:
Daniel A. Haeger, Daniel F. Feezell, Kenji Iso, Kenji Fujito, Robert M. Farrell, James S. Speck, Makoto Saito, Kathryn M. Kelchner, Shuji Nakamura, Daniel A. Cohen, Mathew C. Schmidt, Hisashi Yamada, Steven P. DenBaars
Publikováno v:
Japanese Journal of Applied Physics. 46:L761-L763
We demonstrate continuous-wave (CW) operation of nonpolar m-plane InGaN/GaN laser diodes without Al-containing waveguide cladding layers. Thick InGaN quantum wells (QWs) are used to generate effective transverse optical mode confinement, eliminating