Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Kathrin Frei"'
Publikováno v:
Journal of Crystal Growth. 477:114-117
This work investigates the potential of CdTe semiconducting layers used for radiation detection directly deposited on the Medipix readout-chip by MBE. Due to the high Z-number of CdTe and the low electron-hole pair creation energy a thin layer suffic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::895416a952bff214d53dd2a1463ab05d
https://doi.org/10.1016/j.jcrysgro.2017.02.048
https://doi.org/10.1016/j.jcrysgro.2017.02.048
Publikováno v:
Journal of Crystal Growth. 468:230-234
Cadmium Telluride (CdTe) films are directly deposited on a CMOS (complementary metal-oxide-semiconductor) based readout chip as sensor layer for X-ray detection. This is performed by using a modified Molecular Beam Epitaxy (MBE) setup with a carbon c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::004a7305e198647ec065b7b3a158a8be
https://doi.org/10.1016/j.jcrysgro.2016.12.106
https://doi.org/10.1016/j.jcrysgro.2016.12.106
Autor:
Marcel A. Verheijen, Kathrin Frei, Frank Altmann, Patrick Waltereit, Stefano Leone, Theodor Fuchs, Michael Fiederle, Oliver Ambacher, Andreas Graff, Jana Ligl, Michél Simon-Najasek, Christian Manz, Mario Prescher, Lutz Kirste
Publikováno v:
Semiconductor Science and Technology, 36(3):034003. Institute of Physics
AlScN/GaN epitaxial heterostructures have raised much interest in recent years, because of the high potential of such structures for high-frequency and high-power electronic applications. Compared to conventional AlGaN/GaN heterostructures, the high
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::418f06a295c5fe2d118cf4663635e6e9
https://doi.org/10.1088/1361-6641/abd924
https://doi.org/10.1088/1361-6641/abd924
Autor:
S. Schütt, Stefan Müller, Oliver Ambacher, Michael Fiederle, Raúl Trejo-Hernández, Rolf Aidam, Mario Prescher, Lutz Kirste, Kathrin Frei, Patrick Waltereit
Publikováno v:
Japanese Journal of Applied Physics. 58:SC1045
Due to its outstanding polarization properties and the possibility of lattice-matched growth on GaN, ScxAl1-xN is a promising material among group III nitrides providing a wide field of potential applications in modern semiconductor technology. Howev
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::db21e8293c0f7963c659f71449862582
https://doi.org/10.7567/1347-4065/ab124f
https://doi.org/10.7567/1347-4065/ab124f
Autor:
Robert Brooke, Kathrin Freitag, Ioannis Petsagkourakis, Marie Nilsson, Peter Andersson Ersman
Publikováno v:
Macromolecular Materials and Engineering, Vol 308, Iss 9, Pp n/a-n/a (2023)
Abstract Displays are one of the most mature technologies in the field of printed electronics. Their ability to be manufactured in large quantities and at low cost has led to their recent uptake into the consumer market. Within this article this tech
Externí odkaz:
https://doaj.org/article/38b60dbe58324fcea6c779bd140a1dc2
Publikováno v:
Scientific Reports, Vol 12, Iss 1, Pp 1-7 (2022)
Abstract Electronic matrix addressed displays capable of presenting arbitrary grayscale images typically require complex device architectures including switching components to provide unique pixel addressability. Here, we demonstrate high-yield manuf
Externí odkaz:
https://doaj.org/article/c52813462d454689b3e180c6a48a5d56
Autor:
Peter Andersson Ersman, Kathrin Freitag, Marie Nilsson, Jessica Åhlin, Robert Brooke, Niklas Nordgren, Christian Aulin, Andreas Fall, Yuval Nevo, Valerio Beni
Publikováno v:
Advanced Photonics Research, Vol 4, Iss 1, Pp n/a-n/a (2023)
Manufacturing of electronic devices via printing techniques is often considered to be an environmentally friendly approach, partially due to the efficient utilization of materials. Traditionally, printed electronic components (e.g., sensors, transist
Externí odkaz:
https://doaj.org/article/d9ca780517d7441f99556dd2cf467087
Autor:
Kathrin Frei, Raúl Trejo-Hernández, Sebastian Schütt, Lutz Kirste, Mario Prescher, Rolf Aidam, Stefan Müller, Patrick Waltereit, Oliver Ambacher, Michael Fiederle
Publikováno v:
Japanese Journal of Applied Physics; 6/1/2019, Vol. 58 Issue SC, p1-1, 1p