Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Kathleen Muhonen"'
Publikováno v:
2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::49b33adfeb001a48eb8c0b525f5a1925
https://doi.org/10.1109/bcicts50416.2021.9682498
https://doi.org/10.1109/bcicts50416.2021.9682498
Publikováno v:
2021 43rd Annual EOS/ESD Symposium (EOS/ESD).
One technology enabling 5G telecommunications development are acoustic wave RF filters. However, protecting them from ESD events can be challenging since protection elements use space and could degrade performance of the RF front end module. This pap
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0218b66a4734651597847b70a238d2cb
https://doi.org/10.23919/eos/esd52038.2021.9574778
https://doi.org/10.23919/eos/esd52038.2021.9574778
Publikováno v:
2020 IEEE Radio Frequency Integrated Circuits Symposium (RFIC).
A simple passive capacitance model has been optimized to predict breakdown in a stacked SOI FET. Specifically, as the number of FETs in a switch increases, an equivalent increase in breakdown is not seen in hardware; instead, the breakdown performanc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::be38766925ad42718d52e959c7329920
https://doi.org/10.1109/rfic49505.2020.9218286
https://doi.org/10.1109/rfic49505.2020.9218286
Publikováno v:
Microelectronics Reliability. 128:114430
The IEC 61000-4-2 is a system level test, yet original equipment manufacturers (OEMs) continually ask the IC manufactures to test components with this waveform. The main problem to testing components to the IEC 61000-4-2 is that qualified generators
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4877c621ef8c67bd695928e1513e9ee3
https://doi.org/10.1016/j.microrel.2021.114430
https://doi.org/10.1016/j.microrel.2021.114430
Publikováno v:
2019 41st Annual EOS/ESD Symposium (EOS/ESD).
ESD characterization of an RF switch was investigated by measuring and analyzing the voltage and current at its input and output ports. This characterization shows the device starts conducting during ESD events, allowing more than 1 A of current to p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c0c909eac65eaef239a10b5b43588a41
https://doi.org/10.23919/eos/esd.2019.8870004
https://doi.org/10.23919/eos/esd.2019.8870004
Autor:
Kathleen Muhonen
Publikováno v:
2015 86th ARFTG Microwave Measurement Conference.
With the ever increasing need for spectrum the mobile phones, specifications are tougher for spurious emissions. Harmonics can fall into bands that are used for other services so prior evaluation of those harmonics is critical in product development.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aca1f58df8eba1fcb445f676320676a0
https://doi.org/10.1109/arftg.2015.7381467
https://doi.org/10.1109/arftg.2015.7381467
Publikováno v:
IET Science, Measurement & Technology. 4:220-228
Electrostatic discharge (ESD) testing of integrated circuits (ICs) is necessary to ensure that the products can withstand several types of ESD threats, including those encountered in the factory and in the field. This study discusses the testing of c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::58e53ed37ea455a8ff6c11449bf1e810
https://doi.org/10.1049/iet-smt.2009.0103
https://doi.org/10.1049/iet-smt.2009.0103
Autor:
Kathleen Muhonen
Publikováno v:
2013 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS).
Electrostatic discharge (ESD) testing of integrated circuits (ICs) is necessary to ensure products can withstand several types of ESD threats including those encountered in the factory and in the field. This paper discusses the testing of components
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a7aef308f1fd2b6e6f5d485713c3526c
https://doi.org/10.1109/csics.2013.6659220
https://doi.org/10.1109/csics.2013.6659220
Conference
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