Výsledky vyhledávání - "Kathleen L. Yang"

Can Raman Shift Be Used To Characterize the Mechanical Property of Graphene?

Autor: Fuqian Yang, Kathleen L. Yang, Hyuck Choo, Jeong Oen Lee

Publikováno v: The Journal of Physical Chemistry C. 122:24467-24474

Graphene has potential in a variety of applications, including strain-engineering electronics and sensors. In the heart of these applications is the strain dependence of electronic properties associated to the strain-induced Raman shift of graphene.

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::b86c62a9c06f788442d50c4ad86a1152
https://doi.org/10.1021/acs.jpcc.8b07996

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High-yield single-step catalytic growth of graphene nanostripes by plasma enhanced chemical vapor deposition

Autor: Wei Shiuan Tseng, Chen Chih Hsu, Yilun Li, Yiliang Li, James M. Tour, Jacob D. Bagley, Marcus Teague, Nai-Chang Yeh, Yiran Zhang, Kathleen L. Yang

We report a single-step growth process of graphene nanostripes (GNSPs) by adding certain substituted aromatics (e.g., 1,2-dichlorobenzene) as precursors during the plasma enhanced chemical vapor deposition (PECVD). Without any active heating and by u

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ef3934ed9b8124ed92d6262374019e0f
https://resolver.caltech.edu/CaltechAUTHORS:20171219-081713406

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