Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Kathirgamasundaram Sooriakumar"'
Autor:
Kathirgamasundaram Sooriakumar, Surasak Niemcharoen, Wutthinan Jeamsaksiri, Jirawat Jantawong, Awirut Srisuwan, Nithi Atthi, Anu Austin, Chana Leepattarapongpan
Publikováno v:
Microelectronic Engineering. 206:17-24
In this work, a silicon capacitive microphone structure with a three-dimensional staircase style contour cavity (S-CTC) is developed using a newly developed Multi Film Thickness photo lithography process. This newly developed Multi Film masking proce
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4cbc89d2618bf04f398868ef475cc3da
https://doi.org/10.1016/j.mee.2018.12.004
https://doi.org/10.1016/j.mee.2018.12.004
Autor:
Ekalak Chaowicharat, Surasak Niemcharoen, Kathirgamasundaram Sooriakumar, Wutthinan Jeamsaksiri, Anu Austin, Chana Leepattarapongpan, Jirawat Jantawong
Publikováno v:
2018 International Electrical Engineering Congress (iEECON).
In this paper, the effects of annealing temperature after pre-bonding device wafer and cover wafer during wafer fusion bonding process on the electrical properties of MEMS-based capacitive microphone with 0.53 μm thick poly-Si membrane were investig
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::656a96750681912ecb2391b3e03a60cf
https://doi.org/10.1109/ieecon.2018.8712180
https://doi.org/10.1109/ieecon.2018.8712180
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 20:1878
The etching processes and mechanisms for sidewall formation were investigated for the in situ trench etching and releasing process, using a magnetically enhanced reactive ion etcher (MERIE), and for the Bosch process, using an inductively coupled pla
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8f85128f8a04ebc5656af3d6db0d53a1
https://doi.org/10.1116/1.1501583
https://doi.org/10.1116/1.1501583
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 20:154
This article describes an in situ trench etching and releasing technique to fabricate high aspect-ratio beams for high performance microelectromechanical systems (MEMS) accelerometers using magnetically enhanced reactive ion etching (MERIE) technique
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2c8304ed725e08dd23b1b5390316be03
https://doi.org/10.1116/1.1431961
https://doi.org/10.1116/1.1431961