Zobrazeno 1 - 10
of 89
pro vyhledávání: '"Katherine L. Saenger"'
Autor:
Katherine L. Saenger
Publikováno v:
Proceedings of Meetings on Acoustics.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1936d8a3d285ed3d112a85a35cdddf9a
https://doi.org/10.1121/2.0001657
https://doi.org/10.1121/2.0001657
Publikováno v:
Proceedings of Meetings on Acoustics.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f9c0c6671a02e47ac6c52a0761a1bcbb
https://doi.org/10.1121/2.0001644
https://doi.org/10.1121/2.0001644
Autor:
Katherine L. Saenger
Publikováno v:
The Journal of the Acoustical Society of America. 147(4)
This paper provides an alternative formulation of a transfer matrix method (TMM) long used for modeling the passive resonances of wind instruments. In the conventional, impedance-based TMMs, the quantities being evaluated are the acoustic pressure P
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e22bfa995bbd78ac5d5538a4ab573ca9
https://pubmed.ncbi.nlm.nih.gov/32359327
https://pubmed.ncbi.nlm.nih.gov/32359327
Autor:
Shu-Jen Han, Huan Hu, Katherine L. Saenger, Xiao Hu Liu, Ning Li, Devendra K. Sadana, Stephen W. Bedell
Publikováno v:
Advanced materials (Deerfield Beach, Fla.). 29(18)
Flexible and stretchable electronics are becoming increasingly important in many emerging applications. Due to the outstanding electrical properties of single crystal semiconductors, there is great interest in releasing single crystal thin films and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::db5ab2c8948afc79e63bfa3430b51cf2
https://pubmed.ncbi.nlm.nih.gov/28230918
https://pubmed.ncbi.nlm.nih.gov/28230918
Autor:
Devendra K. Sadana, John A. Ott, Joel P. de Souza, Chun-Yung Sung, Alexander Reznicek, Haizhou Yin, Katherine L. Saenger, Keith E. Fogel
Publikováno v:
ECS Transactions. 6:295-307
In this paper we describe a quasi-hydrophobic bonding method in which ultrathin (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::07f4d0e569636d550adb51ae56489a32
https://doi.org/10.1149/1.2728874
https://doi.org/10.1149/1.2728874
Autor:
R. J. Miller, J. Faltermeier, Pranita Kulkarni, Bruce B. Doris, Kingsuk Maitra, D. McHerron, N R Klymko, E Leobundung, H. Adhikari, Huiming Bu, Chun-Chen Yeh, Katherine L. Saenger, Vamsi Paruchuri, J. O'Neil, Veeraraghavan S. Basker, Ali Khakifirooz, Theodorus E. Standaert, Hemanth Jagannathan
Publikováno v:
IEEE Electron Device Letters. 32:713-715
Strained-silicon-on-insulator (SSOI) undoped-body high-κ /metal-gate n-channel fin-shaped field-effect transistors (nFinFETs) at scaled gate lengths and pitches (i.e.,LGATE ~ 25 nm and a contacted gate pitch of 130 nm) were fabricated using a gate-f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1a1ed78e22846ada1bac7635a99cdc8e
https://doi.org/10.1109/led.2011.2126556
https://doi.org/10.1109/led.2011.2126556
Publikováno v:
Journal of Materials Research. 15:961-966
High-epsilon (HE) and ferroelectric (FE) perovskites such as (Ba, Sr)TiO3 and SrBi2Ta2O9 are attracting substantial interest for use in dynamic random-access memory and nonvolatile memory. In this paper, we describe how an easily decomposable PdO bot
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7729c97ac5943478d2eded346e4ac193
https://doi.org/10.1557/jmr.2000.0137
https://doi.org/10.1557/jmr.2000.0137
Publikováno v:
Journal of Materials Research. 15:194-198
We have demonstrated that the optimum Ta–Si–N compositions for use as oxygen diffusion barriers in stacked-capacitor dynamic random-access memory structures with perovskite dielectrics are in the range Ta(20–25 at.%)–Si(20–45 at.%)–N(35
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a723f749dce2abbddf070094bd26e813
https://doi.org/10.1557/jmr.2000.0031
https://doi.org/10.1557/jmr.2000.0031
Publikováno v:
Journal of Applied Physics. 86:6084-6087
Pt(O) films having compositions ranging from pure Pt to amorphous platinum oxide a-PtOx (x∼1.4) were prepared by reactive sputtering and examined during and after heating to temperatures used for deposition and processing of high-epsilon (HE) and f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b80534132c4e98a322615d06a8cdf828
https://doi.org/10.1063/1.371718
https://doi.org/10.1063/1.371718
Autor:
P. R. Duncombe, David E. Kotecki, J. D. Baniecki, Katherine L. Saenger, H. Shen, Cyril Cabral, J. Lian, Robert B. Laibowitz, Timothy M. Shaw, Q. Y. Ma
Publikováno v:
Journal of the European Ceramic Society. 19:1457-1461
The leakage and dielectric relaxation currents of MOCVD Ba0·7Sr0·3TiO3 thin films with Pt electrodes after post top electrode anneals in oxygen and forming gas (95% Ar, 5% H2) were investigated. The Schottky barrier height for thermionic emission o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b39fc9d526a822f68798794e0c703206
https://doi.org/10.1016/s0955-2219(98)00449-x
https://doi.org/10.1016/s0955-2219(98)00449-x