Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Katherine D. Dombrowski"'
Autor:
Pengfei Cheng, David M. Thierry, Howard Hendrix, Katherine D. Dombrowski, Darshan J. Sachde, Matthew J. Realff, Joseph K. Scott
Publikováno v:
Applied Energy. 341:121076
Publikováno v:
Journal of Environmental Engineering. 130:258-267
Activated-carbon-fiber cloth (ACFC) is an alternative adsorbent to granular activated carbon (GAC) for removing and recovering organic vapors from gas streams. Electrothermal desorption (ED) of ACFC provides rapid regeneration while requiring less en
Autor:
David Ramirez, Patrick D. Sullivan, K. James Hay, Christopher M. B. Lehmann, Katherine D. Dombrowski, Mark J. Rood
Publikováno v:
Journal of Environmental Engineering. 130:268-275
An electrothermal-swing adsorption system was demonstrated on the bench scale for capture and recovery of organic vapors from air streams. Methyl propyl ketone (MPK), methyl ethyl ketone, \in-hexane, acetone, and methylene chloride were removed and r
Publikováno v:
Chemistry of Materials. 11:2515-2519
The mechanism by which a tristable, laterally linked, SC* liquid crystal dimer reorients under the application of an electric field has been investigated by a combination of X-ray diffraction studies and torsional viscosity measurements. A new experi
Autor:
Clifford L. Henderson, Katherine D. Dombrowski, Pavlos C. Tsiartas, Sanju Pancholi, Sajed A. Chowdhury, C. Grant Willson, Ralph R. Dammel
Publikováno v:
Advances in Resist Technology and Processing XIV.
Accurate photoresist modeling parameters are required for correct lithographic simulations. In particular, three sets of data are required to model a typical non-chemically amplified resist: the refractive index as a function of wavelength and exposu
Photoresist characterization for lithography simulation: IV. Processing effects on resist parameters
Autor:
Sajed A. Chowdhury, Clifford L. Henderson, Pavlos C. Tsiartas, Katherine D. Dombrowski, Lewis W. Flanagin, Ammar N. Chinwalla, Sanju Pancholi, C. Grant Willson
Publikováno v:
Advances in Resist Technology and Processing XIV.
In the past, resist parameters (exposure and development parameters) were typically only available for a single set of processing conditions. Therefore, it has been impossible to explore the effect of processing conditions on resist performance using