Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Katharina Peh"'
Autor:
Matthias Steidl, Mingjian Wu, Katharina Peh, Peter Kleinschmidt, Erdmann Spiecker, Thomas Hannappel
Publikováno v:
Nanoscale Research Letters, Vol 13, Iss 1, Pp 1-9 (2018)
Abstract III–V nanowires (NWs) possess great potential for use in future semiconductor technology. Alloying with dilute amounts of nitrogen provides further flexibility in tuning their material properties. In this study, we report on successful in
Externí odkaz:
https://doaj.org/article/e9736c730d03402fb2d1315d433a37fa
Publikováno v:
physica status solidi (a). 219:2200099
Publikováno v:
physica status solidi (a). 219:2200180
Publikováno v:
physica status solidi (a). 219:2200177
Autor:
Thomas Hannappel, Beatriz Galiana, Lars Winterfeld, Matthias Steidl, Erich Runge, Oliver Supplie, Christian Koppka, Peter Kleinschmidt, Katharina Peh
Publikováno v:
e-Archivo. Repositorio Institucional de la Universidad Carlos III de Madrid
instname
instname
Pseudomorphic planar III-V transition layers greatly facilitate the epitaxial integration of vapor liquid solid grown III-V nanowires (NW) on Si(111) substrates. Heteroepitaxial (111) layer growth, however, is commonly accompanied by the formation of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c687fe85840f97c5ab973bf13ba6aaf1
https://doi.org/10.1021/acsnano.7b01228
https://doi.org/10.1021/acsnano.7b01228