Zobrazeno 1 - 10
of 56
pro vyhledávání: '"Katerynchuk, V."'
Publikováno v:
In Thin Solid Films 1 May 2015 582:253-257
Autor:
Kovalyuk Z. D., Katerynchuk V. M., Kudrynskyi Z. R., Kushnir B. V., Netyaga V. V., Khomyak V. V.
Publikováno v:
Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, Iss 5-6, Pp 50-54 (2015)
The article is devoted to studying of influence of vacuum low-temperature annealing on the electrical and photoelectric characteristics of n-ZnO-p-InSe heterostructure. Indium monoselenide (InSe) is a semiconductor of the A3B6 group of layered compo
Externí odkaz:
https://doaj.org/article/3317e04ac85d4b9ca068c7b3c70cd778
Publikováno v:
Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, Iss 5-6, Pp 51-53 (2010)
The surface resistance dynamics of oxides grown thermally on InSe substrates in two crystallography planes is obtained. It is determined that resistance changes considerably only during the first 5 minutes of the oxidization period. The increase of a
Externí odkaz:
https://doaj.org/article/d5036877d2c64cedafa0cc35438b6290
Publikováno v:
Semiconductors. May2015, Vol. 49 Issue 5, p600-603. 4p.
Publikováno v:
Inorganic Materials. Apr2014, Vol. 50 Issue 4, p339-343. 5p.
Autor:
Katerynchuk, V. M., Kushnir, B. V., Kudrynskyi, Z. R., Kovalyuk, Z. D., Tkachuk, I. G., Litvin, O. S.
Publikováno v:
Physics and Chemistry of Solid State; Vol 17, No 4 (2016); 507-510
Фізика і хімія твердого тіла; Vol 17, No 4 (2016); 507-510
Фізика і хімія твердого тіла; Vol 17, No 4 (2016); 507-510
We investigated the photoelectrical properties of the heterojunctions p-GaTe – n-InSe fabricated by the method of mechanical contact of GaTe oxidized plate with van der Waals surface of InSe. The AFM-images revealed that there was formed thin oxide
Autor:
Katerynchuk, V.1, Kudrynskyi, Z.1 kudrynskyi@gmail.com, Khomyak, V.2, Orletsky, I.2, Netyaga, V.1
Publikováno v:
Semiconductors. Jul2013, Vol. 47 Issue 7, p943-946. 4p.
Autor:
Katerynchuk, V.1 valkater@mail.ru, Kudrynskyi, Z.1
Publikováno v:
Semiconductors. Mar2013, Vol. 47 Issue 3, p345-348. 4p.
Autor:
Katerynchuk, V. M.1 valkater@mail.ru, Kudrynskyi, Z. R.1 chimsp@ukrpost.ua
Publikováno v:
Semiconductor Physics, Quantum Electronics & Optoelectronics. 2012, Vol. 15 Issue 3, p214-217. 4p.
Autor:
Katerynchuk, V.1 chimsp@ukrpost.ua, Kovalyuk, Z.1
Publikováno v:
Inorganic Materials. Jul2011, Vol. 47 Issue 7, p749-752. 4p. 2 Graphs.