Anion and Cation Co-Doping of NiO for Transparent Photovoltaics and Smart Window Applications

Autor: Chrysa Aivalioti, Emmanouil G. Manidakis, Nikolaos T. Pelekanos, Maria Androulidaki, Katerina Tsagaraki, Elias Aperathitis

Publikováno v: Crystals, Vol 14, Iss 7, p 629 (2024)

Materials engineering based on metal oxides for manipulating the solar spectrum and producing solar energy have been under intense investigation over the last years. In this work, we present NiO thin films double doped with niobium (Nb) and nitrogen

Externí odkaz: https://doaj.org/article/a78351a101e54b909132a600048f54b2

An assessment of sputtered nitrogen-doped nickel oxide for all-oxide transparent optoelectronic applications: The case of hybrid NiO:N/TiO2 heterostructure

Autor: Chrysa Aivalioti, Alexandros Papadakis, Emmanouil Manidakis, Maria Kayambaki, Maria Androulidaki, Katerina Tsagaraki, Nikolaos T. Pelekanos, Constantinos Stoumpos, Mircea Modreanu, Gabriel Craciun, Cosmin Romanitan, Elias Aperathitis

ransition metal oxides present a unique category of materials due to their versatile optical, electrical and mechanical properties. Nickel oxide (NiO) is an intrinsic p-type oxide semiconductor. P-NiO with controllable and reproducible physico-chemic

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::300299c1413f388b60fff13d65d5cce9
https://hdl.handle.net/10468/12645

Experimental and modeling insight for fin-shaped transistors based on AlN/GaN/AlN double barrier heterostructure

Autor: Maria Androulidaki, George Deligeorgis, Alexandros Georgakilas, Antonis Stavrinidis, George Konstantinidis, Katerina Tsagaraki, G. Doundoulakis, A. Adikimenakis

Publikováno v: Solid-State Electronics. 158:1-10

The exploitation of the two-dimensional electron gas (2DEG) channel of an AlN/GaN/AlN double barrier heterostructure, for High Electron Mobility Transistors (HEMTs) with metal–oxidesemiconductor (MOS) tri-gate around a fin-shaped channel (MOS-FinHE

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::1f0c53485d43c6cc1cf464168ec62902
https://doi.org/10.1016/j.sse.2019.04.005

Effects of ultrathin AlN prelayers on the spontaneous growth of GaN nanowires by plasma assisted molecular beam epitaxy

Autor: Katerina Tsagaraki, Th. Kehagias, T. Koukoula, S. Eftychis, Alexandros Georgakilas, Ph. Komninou, J. Kruse

Publikováno v: Journal of Crystal Growth. 514:89-97

The effects of ultrathin AlN prelayers, with nominal thicknesses between 0 and 1.5 nm, on the spontaneous growth of GaN nanowires (NWs) on Si (1 1 1) substrates were investigated. The morphological and structural characteristics of GaN NWs were analy

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::f2d00b58ef8e718d276c08f544682799
https://doi.org/10.1016/j.jcrysgro.2019.03.004

Cross-Section Doping Topography of 4H-SiC VJFETs by Various Techniques

Autor: Konstantinos Vamvoukakis, Marianthi Panagopoulou, Maher Nafouti, George Konstantinidis, Antonis Stavrinidis, Daniel Alquier, Konstantinos Zekentes, Maria Kayambaki, Nikolaos Makris, Katerina Tsagaraki, Hervé Peyre

Publikováno v: International Conference on Silicon Carbide and Related Materials (ICSCRM 2017)
International Conference on Silicon Carbide and Related Materials (ICSCRM 2017), Sep 2017, Washington, DC, United States. ⟨10.4028/www.scientific.net/MSF.924.653⟩

International audience; Different methods for cross-section doping topography of SiC Trenched-singly-implanted vertical junction field effect transistors (TSI-VJFETs) are presented with the purpose to determine the doping distribution in the epitaxia

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::71c0eee0e03cbc42cb83fcb8a93952e8
https://doi.org/10.4028/www.scientific.net/msf.924.653