Silicon (001) Heteroepitaxy on 3C-SiC(001)/Si(001) Seed

Autor: Marina Gutierrez, Sean R.C. McMitchell, Gabriel Ferro, Veronique Soulière, Daniel Araujo, Taguhi Yeghoyan, Kassem Alassaad

Publikováno v: Materials Science Forum. 924:128-131

We report for the first time the successful heteroepitaxial growth of Si(100) oriented layer on top of a 3C-SiC(001) seed. By using a post-growth modification of the 3C-SiC surface (pulse insertion of precursors during cooling), it led to a change in

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::476082a03d26d5446141b8fe71d27ff6
https://doi.org/10.4028/www.scientific.net/msf.924.128

Comment faire croitre un multi-empilement SiC/Si/SiC/Si complètement orienté (100)

Autor: Gabriel Ferro, Kassem Alassaad, Taguhi Yeghoyan, Daniel Araujo, Veronique Soulière, Marina Gutierrez

Publikováno v: physica status solidi (a)
physica status solidi (a), Wiley, 2019, 216 (10), pp.1800588. ⟨10.1002/pssa.201800588⟩
physica status solidi (a), Wiley, 2019

International audience; This paper reports on the successful elaboration of fully (100) oriented SiC/Si/SiC/Si multi-stack using chemical vapor deposition. Si(100) heteroepitaxyon 3C-SiC(100) is identified as the critical step which is solved by puls

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6444b6a28d39040b9931258c48b153d6
https://hal.archives-ouvertes.fr/hal-02322404

Understanding of the Growth Mechanism Leading to Twin Boundary Elimination during 3C-SiC Heteroepitaxy on α-SiC Substrate by CVD

Autor: François Cauwet, Beatrice Doisneau, V. Souliere, Kassem Alassaad, Gabriel Ferro, Davy Carole

Publikováno v: Materials Science Forum. :209-212

Starting from the previously demonstrated twin-free 3C-SiC growth on 4H-SiC when using Ge pre-deposition treatment, this work focuses on the understanding of the growth mechanism that stands behind this result. Toward this end, short growth experimen

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::a69715c16de8094a6187240f72fad7b3
https://doi.org/10.4028/www.scientific.net/msf.821-823.209

On the Formation of Graphene by Ge Intercalation of a 4H-SiC Surface

Autor: Kassem Alassaad, Efstathios K. Polychroniadis, Dimitris Christofilos, Jarvan Arvanitidis, Gabriel Ferro, Mamour Sall, Narendraraj Chandran, Veronique Soulière

Publikováno v: Materials Science Forum. :961-964

The present communication focuses on the bilayer graphene formation on a Ge doped 4H-SiC surface. The 4H-SiC epilayer was grown by CVD with Germane (GeH4) as the dopant precursor. This easily leads to the formation of Ge islands as well as graphene o

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::2326b4110a8a238d2d5f7ffa6fbbe87e
https://doi.org/10.4028/www.scientific.net/msf.821-823.961

Nanodiamond Integration with Photonic Devices

Autor: Jelena Vuckovic, Jingyuan Linda Zhang, Peter Maurer, Yousif A. Kelaita, Yan-Kai Tzeng, Kassem Alassaad, Gabriel Ferro, Constantin Dory, Hitoshi Ishiwata, Marina Radulaski, Konstantinos G. Lagoudakis, Zhi-Xun Shen, Steven Chu, Nicholas A. Melosh, Shuo Sun, Kevin A. Fischer

Publikováno v: Laser & Photonics Reviews. 13:1800316

We discuss the progress in integration of nanodiamonds with photonic devices for quantum optics applications. Experimental results in GaP, SiO2 and SiC-nanodiamond platforms show that various regimes of light and matter interaction can be achieved by

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::c5e27fc12a3199c0454d8f8b328e0d4e
https://doi.org/10.1002/lpor.201800316