Zobrazeno 1 - 10
of 80
pro vyhledávání: '"Kasif Teker"'
Autor:
Tarik U. Teker, Kasif Teker
Publikováno v:
Journal of Electronic Materials. 52:2372-2379
© 2023, The Minerals, Metals & Materials Society.It is becoming crucial to design/fabricate eco-friendly, sustainable electronic and photonic devices to minimize the carbon footprint for future systems. In this study, we have demonstrated a steady p
Autor:
Kasif Teker
Publikováno v:
Journal of Nano Research. 74:25-34
This work presents the fabrication and testing of a cost-effective, low power consuming, high sensitivity aluminum nitride nanowire-film-based ultraviolet photodetector. Time-dependent dynamics of photocurrent rise and decay have been investigated wi
Autor:
Kasif Teker, Habeeb Mousa
Publikováno v:
Microelectronics International. 38:78-83
Purpose The purpose of this study is to present a systematic investigation of the effect of high temperatures on transport characteristics of nitrogen-doped silicon carbide nanowire-based field-effect transistor (SiC-NWFET). The 3C-SiC nanowires can
Autor:
Yusuf B. Ozdemir, Kasif Teker
Publikováno v:
Applied Physics B. 128
Autor:
M. Samil Onder, Kasif Teker
Flexible and transparent devices are expected to meet increasing consumer demands for upgrades in wearable devices, smart electronic and photonic applications. In this work, nano-manufacturing of a flexible and powerless silicon carbide nanowire netw
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7ad74965fc8a25b074b13ae3b3cb8b11
https://hdl.handle.net/11424/282723
https://hdl.handle.net/11424/282723
The effect of pH on the performance of undoped silicon carbide nanowire field-effect transistors (SiCNW-FETs) was systematically studied using various solutions with pH ranging from pH 2 to pH 13 and important transport parameters such as transconduc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::dd3d59daafd22048197ecb26794b4486
https://hdl.handle.net/11424/287125
https://hdl.handle.net/11424/287125
Publikováno v:
Journal of Materials Science: Materials in Electronics. 32:3431-3436
This paper investigates the effect of pH on transport properties of silicon carbide nanowire field-effect transistor (SiCNW-FET) including the key parameters such as transconductance, resistivity, stability, and repeatability of the device towards ha
Autor:
Kasif Teker
Publikováno v:
Journal of Nano Research. 60:86-93
High UV-light sensitivity, fast response, and low power consumption are the most important features of nanowire-based devices for new applications in photodetectors, optical switches, and image sensors. Single AlN nanowire deep ultraviolet (UV) photo
Autor:
Mustafa A Yildirim, null Kasif Teker
Publikováno v:
Physica Scripta. 97:115804
In recent years, it is becoming inevitable to design/construct eco-friendly sustainable electronic and photonic devices to minimize the footprints of these as part of the fight against global problems like resource depletion and pollution. To this en
Autor:
Kasif TEKER
Publikováno v:
Sensors & Transducers, Vol 88, Iss 2, Pp 1-8 (2008)
Carbon nanotubes (CNTs) have many unique properties such as high surface area, hollow cavities, and excellent mechanical and electrical properties. Solubilization and biological functionalization of carbon nanotubes have greatly increased the usage o
Externí odkaz:
https://doaj.org/article/f7cddedcd477464c969fb44fca8099e1