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Rare-earth doped form, ceria (CeO2) is of interest as a potential candidate for solid oxide fuel cells (SOFCs) because of its relatively high oxygen ion conductivity at temperatures below 600 {\deg}C. At the present time, computational chemistry has
Externí odkaz:
http://arxiv.org/abs/1603.06982
Publikováno v:
Phys. Rev. B 91, 054518 (2015)
A chain of magnetic atoms with non-collinear spin configuration on a superconductor is a promising new system that can host Majorana Fermions (MFs). In this study, we clarify that in the presence of MFs, an odd-frequency Cooper pair is generated at t
Externí odkaz:
http://arxiv.org/abs/1410.1245
Publikováno v:
Supercond. Sci. Technol. 28 (2015) 014001
We study Majorana edge states and their topological properties of one-dimensional(1D) and two-dimensional(2D) Rashba semiconductor deposited on iron-based superconductor under the applied Zeeman field for various directions. Using the recursive Green
Externí odkaz:
http://arxiv.org/abs/1403.5857
Publikováno v:
J. Phys. Soc. Jpn., Vol.82, No.12, p.124707 (2013)
Effects of coupling between an molecular exciton and a surface plasmon (exciton-plasmon coupling) on the luminescence properties of the molecule and the surface plasmons are investigated using nonequilibrium Green's function method. Molecular absorpt
Externí odkaz:
http://arxiv.org/abs/1305.3811
Publikováno v:
J. Phys. Soc. Jpn., Vol.82, No.6, p.063715 (2013)
Effects of coupling between a molecular exciton and a surface plasmon (exciton-plasmon coupling) on the luminescence properties of the molecule and the surface plasmons are investigated using the nonequilibrium Green's function method. Molecular abso
Externí odkaz:
http://arxiv.org/abs/1212.0081
Autor:
Saputro, Adhitya G., Putra, Refaldi I.D., Maulana, Arifin L., Karami, Muhammad U., Pradana, Mochamad R., Agusta, Mohammad K., Dipojono, Hermawan K., Kasai, Hideaki
Publikováno v:
In Journal of Energy Chemistry August 2019 35:79-87
Autor:
Itliong, Jester N., Villagracia, Al Rey C., Moreno, Joaquin Lorenzo V., Rojas, Kurt Irvin M., Bernardo, Gian Paolo O., David, Melanie Y., Manrique, Robby B., Ubando, Aristotle T., Culaba, Alvin B., Padama, Allan Abraham B., Ong, Hui Lin, Chang, Jo-Shu, Chen, Wei-Hsin, Kasai, Hideaki, Arboleda, Nelson B., Jr.
Publikováno v:
In Bioresource Technology May 2019 279:181-188
Autor:
Aspera, Susan Meñez, Kasai, Hideaki, Kishi, Hirofumi, Awaya, Nobuyoshi, Ohnishi, Shigeo, Tamai, Yukio
Resistance Random Access Memory (RRAMTM) device, with its electrically induced nanoscale resistive switching capacity, has been gaining considerable attention as future non-volatile memory device. Here, we propose a mechanism of switching based on ox
Externí odkaz:
http://arxiv.org/abs/1112.2500