Zobrazeno 1 - 10
of 155
pro vyhledávání: '"Kary Chien"'
Autor:
Wei-Ting Kary Chien, Feng Hao
Publikováno v:
IEEE Transactions on Device and Materials Reliability. 20:106-118
Advancement in integrated circuit (IC) brings a series of challenges on product reliability. In order to meet these challenges and fulfill customers’ requirements, we introduced the methodology of building-in reliability (BIR) into whole stages dur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::496cee44e3880666bdb2b21fa7881b9b
https://doi.org/10.1109/tdmr.2020.2964999
https://doi.org/10.1109/tdmr.2020.2964999
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing. 32:310-319
Identification of the defective patterns of the wafer maps can provide insights for the quality control in the semiconductor wafer fabrication systems (SWFSs). In real SWFSs, the collected wafer maps are usually imbalanced from the defective types, w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::62b9f29e7386ae3890468a1eec4cbc16
https://doi.org/10.1109/tsm.2019.2925361
https://doi.org/10.1109/tsm.2019.2925361
Publikováno v:
IEEE Transactions on Device and Materials Reliability. 19:416-425
The static random access memory (SRAM) is generally used in the technology qualification vehicle (TQV) in the semiconductor industries (e.g., assess process maturity and reliability risks). It is well known that the minimum operating voltage shift (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b632581f9c0fa59dcb848c32b9dad12f
https://doi.org/10.1109/tdmr.2019.2916481
https://doi.org/10.1109/tdmr.2019.2916481
Publikováno v:
IEEE Transactions on Reliability. 68:526-538
The semiconductor manufacturing is one of the most sophisticated processes in modern industries. It contains hundreds of complex operations, and this makes semiconductor reliability a challenging task especially in recent years that integrated circui
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0c7c64dee691683f62cc0b9d933cda55
https://doi.org/10.1109/tr.2018.2869597
https://doi.org/10.1109/tr.2018.2869597
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing. 32:93-103
In modern semiconductor manufacturing, one type of measured particle count data contains excess zeros, and the ratio of zeros in the measurements is usually larger than 50%. This type of particle count sample data cannot be well modeled by popular de
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a5d567f191e37662aa7f7b47d5de5aca
https://doi.org/10.1109/tsm.2018.2882862
https://doi.org/10.1109/tsm.2018.2882862
Autor:
Wei-Ting Kary Chien, Yuanzi Lester Yin
Publikováno v:
Journal of Failure Analysis and Prevention. 18:1490-1502
Design for test (DFT) has been widely applied to digital circuit failure analysis (FA) in semiconductor industries. The FA methods based on DFT involve layer-by-layer checks using a polisher and an SEM for defect identification and localization. Yet
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7dad658bdc343122adbcfa32767333c2
https://doi.org/10.1007/s11668-018-0546-x
https://doi.org/10.1007/s11668-018-0546-x
Publikováno v:
Microelectronics Reliability. 81:368-372
The ultra-low k dielectrics have been widely used as semiconductor technology steps into 45 nm, 28 nm, and more advanced nodes. Combined with the rapid shrinks of critical dimensions, the ultra-low k dielectrics face challenges to retain the benefits
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::463b48466a22e911de508b761e57b9ca
https://doi.org/10.1016/j.microrel.2017.10.033
https://doi.org/10.1016/j.microrel.2017.10.033
Autor:
Wei Ting Kary Chien, XiangFu Zhao
Publikováno v:
Microelectronics Reliability. 72:1-4
The effects of baking temperature on back-end-of-line (BEOL) reliability were explored on 28 nm technology node. We found that stress migration (SM) worse temperature showed up around 200 °C and apparent negative resistance (R) shifts appeared after
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::23e8a6bb13e0a1a2ec0c76b4d482ff0a
https://doi.org/10.1016/j.microrel.2017.03.019
https://doi.org/10.1016/j.microrel.2017.03.019
Publikováno v:
Microelectronics Reliability. 64:220-224
The NBTI (negative bias temperature instability) performance of 28 nm HfO2-based HKMG (high-κ metal gate) I/O thick oxide p-MOSFETs with different I/O oxide processes is reported. The results show that the NBTI performance from ISSG (in-situ steam g
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::de91a49e1898d4a918d56bed3370bed4
https://doi.org/10.1016/j.microrel.2016.07.004
https://doi.org/10.1016/j.microrel.2016.07.004
Autor:
Siyuan Frank Yang, Wei-Ting Kary Chien
Publikováno v:
IEEE Transactions on Reliability. 64:1158-1163
In this paper, we report electromigration (EM) reliability optimizations using highly efficient uniform design (UD). Considering the large error that results from using a single lifetime index, and the different EM failure modes, we introduce a new p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3d84647c3bdc3d9a8e9def664a07c133
https://doi.org/10.1109/tr.2015.2453117
https://doi.org/10.1109/tr.2015.2453117