A 1.67Tb, 5b/Cell Flash Memory Fabricated in 192-Layer Floating Gate 3D-NAND Technology and Featuring a 23.3Gb/mm2 Bit Density

Autor: Ali Khakifirooz, Eduardo Anaya, Sriram Balasubrahrmanyam, Geoff Bennett, Daniel Castro, John Egler, Kuangchan Fan, Rifat Ferdous, Kartik Ganapathi, Omar Guzman, Chang Wan Ha, Rezaul Haque, Vinaya Harish, Majid Jalalifar, Owen W. Jungroth, Sung-Taeg Kang, Golnaz Karbasian, Jee-Yeon Kim, Siyue Li, Aliasgar S. Madraswala, Srivijay Maddukuri, Amr Mohammed, Shanmathi Mookiah, Shashi Nagabhushan, Binh Ngo, Deep Patel, Sai Kumar Poosarla, Naveen V. Prabhu, Carlos Quiroga, Shantanu Rajwade, Ahsanur Rahman, Jalpa Shah, Rohit S. Shenoy, Ebenezer Tachie Menson, Archana Tankasala, Sandeep Krishna Thirumala, Sagar Upadhyay, Krishnasree Upadhyayula, Ashley Velasco, Nanda Kishore Babu Vemula, Bhaskar Venkataramaiah, Jiantao Zhou, Bharat M. Pathak, Pranav Kalavade

Publikováno v: 2023 IEEE International Solid- State Circuits Conference (ISSCC).

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::177753a2ce8bb9f42c2ea9a8a3d32f41
https://doi.org/10.1109/isscc42615.2023.10067616

How Good Can Monolayer MoS2 Transistors Be?

Autor: Kartik Ganapathi, Youngki Yoon, Sayeef Salahuddin

Publikováno v: Nano Letters. 11:3768-3773

Monolayer molybdenum disulfide (MoS2), unlike its bulk form, is a direct band gap semiconductor with a band gap of 1.8 eV. Recently, field-effect transistors have been demonstrated experimentally using a mechanically exfoliated MoS2 monolayer, showin

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::4080c9a4eb1430574531e97b987bc7e7
https://doi.org/10.1021/nl2018178

Monolayer MoS2 transistors - ballistic performance limit analysis

Autor: Kartik Ganapathi, Youngki Yoon, Sayeef Salahuddin

Publikováno v: 69th Device Research Conference.

To summarize, using ballistic NEGF-based transport simulations, we project the maximum performance achievable with monolayer MoS 2 transistors. Our simulations show that these devices can provide (i) excellent switching behavior with very high ON cur

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::7a647141b133c17479c560f545c2cafb
https://doi.org/10.1109/drc.2011.5994421

Ultrathin compound semiconductor on insulator layers for high performance nanoscale transistors

Autor: Morten Madsen, Steven Chuang, Sayeef Salahuddin, Yu-Lun Chueh, Hui Fang, Paul W. Leu, Szu-Ying Chen, Ali Javey, Sanjay Krishna, Kartik Ganapathi, Ha Sul Kim, Elena Plis, Rehan Kapadia, Hyunhyub Ko, Alexandra C. Ford, Kuniharu Takei

Publikováno v: Ko, H, Takei, K, Kapadia, R, Chuang, S, Fang, H, Leu, P W, Ganapathi, K, Plis, E, Kim, H S, Chen, S-Y, Madsen, M, Ford, A C, Chueh, Y-L, Krishna, S, Salahuddin, S & Javey, A 2010, ' Ultrathin compound semiconductor on insulator layers for high-performance nanoscale transistors ', Nature, vol. 468, pp. 286-289 . https://doi.org/10.1038/nature09541

Compound semiconductor materials such as gallium arsenide and indium arsenide have outstanding electronic properties, but are costly to process and cannot, on their own, compete with silicon when it comes to low-cost fabrication. But as the relentles

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c1b55d87c1ce43ac8f1aef601c49f9a9

Analysis of InAs Vertical and Lateral Band-to-Band Tunneling Transistors: Leveraging Vertical Tunneling for Improved Performance

Autor: Kartik Ganapathi, Youngki Yoon, Sayeef Salahuddin

Using self-consistent quantum transport simulation on realistic devices, we show that InAs band-to-band Tunneling Field Effect Transistors (TFET) with a heavily doped pocket in the gate-source overlap region can offer larger ON current and steeper su

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a4a3c0198969e1720287e9d653e6c7bb